Browsing by Author "Yang, Shao-Ming"

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Cerium oxide nanocrystals for nonvolatile memory applications
(2007-12-24)
Yang, Shao-Ming
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Chien, Chao-Hsin
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Huang, Jiun-Jia
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Lei, Tan-Fu
;
Tsai, Ming-Jinn
The characteristics of silicon-oxide-nitride-oxide-silicon-type memories embedded with cerium oxide nanocrystals were demonstrated. They were fabricated by depositing a thin CeO(2) film on the SiO(2) tunneling layer and subsequently rapid-thermal annealing process. The mean size and aerial density of the CeO(2) nanocrystals embedded in SiO(2) are estimated to be about 8-10 nm and (3-7)x10(11)/cm(-2) after a high-temperature annealing with different ambients on 900 degrees C. The program/erase behaviors and data retention characteristics were described to demonstrate its advantages for nonvolatile memory device applications. (c) 2007 American Institute of Physics.
High charge storage characteristics of CeO2 nanocrystals for novolatile memory applications
(2008)
Yang, Shao-Ming
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Huang, Jiun-Jia
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Chien, Chao-Hsin
;
Taeng, Pei-Jer
;
Lee, Lurng-Shehng
This paper presents the formation of CeO2 nanocrystals on SiO2 tunneling layer and its annealing effect to the nonvolatile memory device. The characteristics including the program/erase behaviors, data retention, and endurance of Silicon-Oxide-Nitride-Oxide-Silicon type memories embedded with cerium oxide (CeO2) nanocrystals were studieded to demonstrate its advantages as a nonvolatile memory device.
Nanocrystallization and interfacial tension of sol-gel derived memory
(2008-03-24)
Wu, Chi-Chang
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Tsai, Yi-Jen
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Chu, Min-Ching
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Yang, Shao-Ming
;
Ko, Fu-Hsiang
The formation of the nanocrystals (NCs) by using the sol-gel spin-coating method at various annealing temperatures had been studied. The film started to form the islands at 600 degrees C annealing, and finally transferred into NCs at 900 degrees C. A model was proposed to explain the transformation of thin film. The morphology of sol-gel thin film at 600 degrees C annealing was varied and had higher interfacial energy. The crystallized process at 900 degrees C annealing could minimize the energy. The retention for 900 degrees C annealed sample exhibited less than 30% charge loss after 10(6) s at 125 degrees C measurement. (c) 2008 American Institute of Physics.
Nonvolatile flash memory devices using CeO2 nanocrystal trapping layer for two-bit per cell applications
(2007-06-01)
Yang, Shao-Ming
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Chien, Chao-Hsin
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Huang, Jiun-Jia
;
Lei, Tan-Fu
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電子工程學系及電子研究所
In this study, we demonstrated the characteristics of nonvolatile silicon oxide nitride oxide silicon (SONOS)-type memories using cerium oxide (CeO2) nanocrystals as a charge storage agent. We observed that the shape of the formed CeO2 nanocrystals is nearly spherical and that their size is almost similar identical to their high density of 5 x 101, cm(-2). Such CeO2 nanocrystals were formed by depositing a thin CeO2 film of ca. 2-3 nm thickness using an evaporater gun system and then rapid thermal annealing (RTA) in O-2 ambient at 900 degrees C for 1min. The fabricated memory devices show good electrical properties in terms of a sufficiently large memory window (>2 V), program/erase (P/E) speed (0.1/1 ms), retention time up to 10(4) S with only 5% charge loss, and endurance after 10(5) cycles with small memory window narrowing and two-bit operation. These properties suggest that the nonvolatile SONOS-type memories with the CeO2 nanocrystal trapping agent can be applied in future flash memories.
Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress
(2015)
Tsai, Jung-Ruey
;
Wen, Ting-Ting
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Yang, Shao-Ming
;
Sheu, Gene
;
Chang, Ruey-Dar
This work investigates the degradation of electrical characteristics of amorphous silicon thin-film transistors during the accelerated ESD stress with a 40V high voltage and a high/low current of 2 mA/0.1 mu A conditions. Both the leakage current and the threshold voltage shift are severe as the accelerated ESD stress applied at the gate region. The 40V accelerated ESD stress with a high current has more severe impact on the electrical performance of device than that with a low current.