Browsing by Author "Yang, Sheng-Jier"

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Modeling the well-edge proximity effect in highly scaled MOSFETs
(2006-11-01)
Sheu, Yi-Ming
;
Su, Ke-Wei
;
Tian, Shiyang
;
Yang, Sheng-Jier
;
Wang, Chih-Chiang
The well-edge proximity effect caused by ion scattering during implantation in highly scaled CMOS technology is explored from a physics and process perspective. Technology computer-aided design (TCAD) simulations together with silicon wafer experiments have been conducted to investigate the impact of this effect. The ion scattering model and TCAD simulations provided a physical understanding of how the internal changes of the MOSFETs are formed. A new compact model for SPICE is proposed using physics-based understanding and has been calibrated using experimental silicon test sets.
Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion model
(2006-08-01)
Sheu, Yi-Ming
;
Yang, Sheng-Jier
;
Wang, Chih-Chiang
;
Chang, Chih-Sheng
;
Chen, Ming-Jer
N-channel metal-oxide-semiconductor field effect transistors (MOSFETs) with a lightly doped well exhibit subthreshold current versus voltage (I-V) characteristics that are sensitive to shallow trench isolation (STI) mechanical stress. Such striking dependencies offer the opportunity to validate a proposed two-dimensional (2D) process model that relates the impurity diffusion to the mechanical stress throughout the substrate. With the assistance of sophisticated process/device simulations, the model appears to satisfactorily reproduce subthreshold I-V characteristics for different active area lengths and different substrate biases. The stress-dependent point defect equilibrium concentration and diffusion model are also implemented to evaluate the stress effect on transient enhanced diffusion.