Browsing by Author "Yang, Shih-Chun"

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Assessment of ESD Robustness in High Power Light-Emitting Diodes
(2010)
Yang, Shih-Chun
;
Lin, Pang
;
Fu, Han-Kuei
;
Wang, Chien-Ping
;
Chen, Tzung-Te
The capability of high-power nitride-based light-emitting diodes (HPLED) to withstand electrostatic discharge (ESD) is very important key index due to the horizontal structure of the insulating property of the sapphire substrate. However, it is difficult to real-time monitor the damage caused by the ESD stress because it occurred in a very short period. Current-voltage (I-V) curves and electroluminescence (EL) spectrum were applied to study the change during the series ESD stress. Time-resolved optical beam induced current (TR-OBIC) was used to analyze the characteristics of the delay time between normal region and the defect point caused by ESD stress. Transmission electron microscopy (TEM) was used to compare to the difference in the distribution of damage region and investigate the failure modes. During the series ESD stresses, V-shaped pits suffered from the high electrical field and the distance from multi-quantum well (MQW). The bottom of V-shaped defect would be one of index to assess the ESD endurance of LED chips.
Failure and degradation mechanisms of high-power white light emitting diodes
(2010-07-01)
Yang, Shih-Chun
;
Lin, Pang
;
Wang, Chien-Ping
;
Huang, Sheng Bang
;
Chen, Chiu-Ling
The investigation explores the factors that influence the long-term performance of high-power 1 W white light emitting diodes (LEDs). LEDs underwent an aging test in which they were exposed to various temperatures and electrical currents, to identify both their degradation mechanisms and the limitations of the LED chip and package materials. The degradation rates of luminous flux increased with electrical and thermal stresses. High electric stress induced surface and bulk defects in the LED chip during short-term aging, which rapidly increased the leakage current. Yellowing and cracking of the encapsulating lens were also important in package degradation at 0.7 A/85 degrees C and 0.7 A/55 degrees C. This degradation reduced the light extraction efficiency to an extent that is strongly related to junction temperature and the period of aging. junction temperatures were measured at various stresses to determine the thermal contribution and the degradation mechanisms. The results provided a complete understanding of the degradation mechanisms of both chip and package, which is useful in designing highly reliable and long-lifetime LEDs. Crown Copyright (C) 2010 Published by Elsevier Ltd. All rights reserved.