Browsing by Author "Yang, Tsung-Yuan"

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Two-bit lanthanum oxide trapping layer nonvolatile flash memory
(2007)
Lin, Yu-Hsien
;
Chien, Chao-Hsin
;
Yang, Tsung-Yuan
;
Lei, Tan-Fu
;
電子工程學系及電子研究所
This paper describes the two-bit characteristics of SONOS-type memories prepared using lanthanum oxide, a high-k dielectric material, as the trapping layers. We used "channel hot-electron injection" for programming and "band-to-band hot-hole injection" for erasing to perform the memory operations. We observed large memory windows, a relatively high P/E speed, and good retention characteristics for these SONOS-type memories. It appears that La2O3 is an excellent candidate for use as the trapping layer in SONOS-type memories. (C) 2007 The Electrochemical Society.