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Browsing by Author "Yang, Tzu-Ming"

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    Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
    (2010-11-01)
    Wang, Bau-Ming
    ;
    Yang, Tzu-Ming
    ;
    Wu, YewChung Sermon
    ;
    Su, Chun-Jung
    ;
    Lin, Horng-Chih
    High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.
  • Thumbnail Image
    Item type:Item,
    Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors
    (2010-11-01)
    Wang, Bau-Ming
    ;
    Yang, Tzu-Ming
    ;
    Wu, YewChung Sermon
    ;
    Su, Chun-Jung
    ;
    Lin, Horng-Chih
    High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (alpha-Si)/chem-SiO(2) films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process. (C) 2010 Elsevier B.V. All rights reserved.
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    Item type:Item,
    Improved Performance of NILC Poly-Si Nanowire TFTs by Using Ni-Gettering
    (2010)
    Wang, Bau-Ming
    ;
    Yang, Tzu-Ming
    ;
    Wu, YewChung Sermon
    ;
    Su, Chun-Jung
    ;
    Lin, Horng-Chih
    Nickel contamination inside nickel-metal induced lateral crystallization polycrystalline silicon is an issue to fabricate high performance nanowire thin film transistors. The phosphorous-doped alpha-Si/chem-SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance of NILC poly-Si NW TFTs. It was found that the performance of NW TFTs was greatly improved after Ni-gettering process.