Browsing by Author "Yang, Ya-Liang"

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Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications
(2012-12-01)
Tsai, Tsung-Ming
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Chang, Kuan-Chang
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Chang, Ting-Chang
;
Syu, Yong-En
;
Chuang, Siang-Lan
In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes.
Characteristics of hafnium oxide resistance random access memory with different setting compliance current
(2013-10-14)
Su, Yu-Ting
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Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
In this Letter, the characteristics of set process of hafnium oxide based resistance random access memory are investigated by different set processes with increasing compliance current. Through current fitting, carrier conduction mechanism of low resistance state changes from hopping to surface scattering and finally to ohmic conduction with the increase of setting compliance current. Experimental data of current-voltage measurement under successive increasing temperature confirms the conduction mechanism transition. A model of filament growth is eventually proposed in a way by merging discrete metal precipitates and electrical field simulation by COMSOL Multiphysics further clarifies the properties of filament growth process. (C) 2013 AIP Publishing LLC.
Endurance Improvement Technology With Nitrogen Implanted in the Interface of WSiOx Resistance Switching Device
(2013-07-01)
Syu, Yong-En
;
Zhang, Rui
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide (WSiOx) and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer WSiOx/WSiON memory structure would enhance the endurance over 100 times so as to better confirm the WSiOx RRAM application of nonvolatile memory.
High performance of graphene oxide-doped silicon oxide-based resistance random access memory
(2013-11-21)
Zhang, Rui
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Chang, Kuan-Chang
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chen, Kai-Huang
In this letter, a double active layer (Zr:SiO (x) /C:SiO (x) ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO (x) layer. Compared with single Zr:SiO (x) layer structure, Zr:SiO (x) /C:SiO (x) structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
(2013-05-01)
Chang, Kuan-Chang
;
Zhang, Rui
;
Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Lou, J. C.
In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
Predicting the Remaining Useful Life of Plasma Equipment through XCSR
(2019-01-01)
Chen, Liang-Yu
;
Lee, Jia-Hua
;
Yang, Ya-Liang
;
Yeh, Ming-Tsung
;
Hsiao, Tzu-Chien
Predicting remaining useful life (RUL) of plasma equipment becomes an important issue for semiconductor manufacturing in this decade. If RUL can be accurately estimated, the schedule of maintenance can be proper to moderate the waste and cost of the production. Digital Radio Frequency Matching Box (RF-MB) is an essential equipment in the semiconductor manufacturing process. The status of RF-MB will be recorded by the Fault Detection and Classification (FDC). In order to establish the RUL of RF-MB, we use Fisher Discriminant Analysis (FDA) for feature selection to concentrate the leading variables in FDC. We marked the first 2 days of the RF-MB operation as "Good" and marked the last 2 days before the failure of RF-MB as "Bad". We used eXtended Classifier System with continuous -valued inputs (XCSR) to learn the well-labeled FDC data. The results show that XCSR can quickly find patterns and meaningful variables. The average accuracy of XCSR is 97.3% and the average missing rate of rules is only about 1.6%. The results confirmed that XCSR is capable of alerting related operator before the plasma component reaching its residual life. In the future, we will use XCS with Function approximation (XCSF) to more accurately approximate the function of RUL. We look forward to building a complete assessment of RUL.