Browsing by Author "Yang, Yanbing"

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Enhanced Reliability of In-Ga-ZnO Thin-Film Transistors Through Design of Dual Passivation Layers
(2018-07-01)
Abliz, Ablat
;
Wan, Da
;
Chen, Jui-Yuan
;
Xu, Lei
;
He, Jiawei
This paper investigates the effects of different passivation layers (PVLs) on the electrical performance and reliability of amorphous indium gallium zinc oxide (a-In-Ga-ZnO) thin film transistors (TFTs). By rational design, the fabricated a-InGaZnO TFT with hafnium oxide and aluminum oxide (HfO2/Al2O3) dual PVLs exhibits a field-effect mobility of 13.5 cm(2)/Vs, low sub threshold swing of 0.32 V/decade, and especially, small threshold voltage shifts of 0.5 (-0.6) V and 1.1 (-1.2) V under positive (negative) gate bias, and light illumination stress at the relative humidity of 40%. Furthermore, the a-In-Ga-ZnO TFTs with HfO2/Al2O3 dual PVLs maintain reasonable mobility and electrical performance even exposure to ambient condition for up to four months. This enhanced stability is attributed to the presence of high-quality HfO2/Al2O3 dual PVLs, which not only could suppress the photodesorption, reduce the total trap density and subgap photoexcitation behavior, but also protect the channel from environmental effects. Thus, the rational-designed HfO2/Al2O3 dual PVLs passivated a-In-Ga-ZnO TFTs with superior reliability represent a great step toward the achievement of long-term reliable zinc oxide-based oxide TFTs.