Browsing by Author "Yang, Young"

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Significant Improvement of GaN Crystal Quality with Ex-situ Sputtered AlN Nucleation Layers
(2016-01-01)
Chen, Shuo-Wei
;
Yang, Young
;
Wen, Wei-Chih
;
Li, Heng
;
Lu, Tien-Chang
Ex-situ sputtered AlN nucleation layer has been demonstrated effective to significantly improve crystal quality and electrical properties of GaN epitaxy layers for GaN based Light-emitting diodes (LEDs). In this report, we have successfully reduced X-ray (102) FWHM from 240 to 110 arcsec, and (002) FWHM from 230 to 101 arcsec. In addition, reverse-bias voltage (Vr) increased around 20% with the sputtered AlN nucleation layer. Furthermore, output power of LEDs grown on sputtered AlN nucleation layer can be improved around 4.0% compared with LEDs which is with conventional GaN nucleation layer on pattern sapphire substrate (PSS).