Browsing by Author "Yao, Hsin-Hung"
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Item type:Item, Process of producing group III nitride based reflectors(2007-06-07) ;Huang, Gensheng ;Yao, Hsin-Hung ;Kuo, Hao-ChungWang, Shing-ChungTo solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors.Item type:Item, Strong ultraviolet emission from InGaN/AlGaN multiple quantum well grown by multi-step process(2007-04-01) ;Chen, Hou-Guang ;Hsu, Nai-Fang ;Chu, Jung-Tang ;Yao, Hsin-HungLu, Tien-ChangWe propose a method of realizing strong ultraviolet emission from InGaN/AlGaN multiple quantum wells (MQWs) grown by a multi-step process. During growth of the quantum well layer, only trimethylindium (TMIn) and ammonia were introduced into the reactor, followed by a growth interruption treatment before growth of AlGaN barriers. The growth temperature of QWs dominates the photoluminescence (PL) emission peak position and surface morphologies of the films. It was found that the PL spectra of the samples with MQWs grown at 685 degrees C showed a strong UV emission at 380 nm. The correlation between surface structures and optical characteristics was studied by cathodoluminescence microscopy. The electroluminescence spectra under various injection currents showed a weak carrier localization effect induced by a quantum-confined Stark effect in the MQW.