Browsing by Author "Yao, J. N."

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Optimization of gate insulator material for GaN MIS-HEMT
(2016)
Lin, Y. C.
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Lin, T. W.
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Wu, C. H.
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Yao, J. N.
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Hsu, H. T.
Metal-insulator-semiconductor (M-I-S) structure has been employed for GaN HEMTs to suppress gate leakage current. In this work, various gate insulator materials including SiO2, HfO2, La2O3, HfO2/SiO2 and La2O3/SiO2 were investigated for GaN MIS-HEMT application. It is found that GaN MIS-HEMT with La2O3/SiO2 composite oxide results in better device performance and reliability as compared to other gate insulator materials.
Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise Application
(2019-01-01)
Wang, C.
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Lin, Y. C.
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Kuo, C. N.
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Lee, M. W.
;
Yao, J. N.
An enhancement-mode tri-gate InAs HEMT is investigated for low noise application in this paper. The 3-D tri-gate structure is sidewall-gate-metal connected to InAlAs layers, the gate connection to the InAlAs layers increases their potential to the positive direction with increasing the gate bias, resulting gate control ability enhancement. Compared with planar device, the tri-gate device shows high transconductance and low noise figure. The enhancement-mode tri-gate device exhibits excellent low noise figure with less than 3.5 dB when the device operation frequency range of 18 GHz to 50 GHz.
Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTs
(2019-01-01)
Lin, Y. C.
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Lee, M. W.
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Tsai, M. Y.
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Wang, C.
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Yao, J. N.
In this study, the thick copper metallization with WNx as diffusion barrier is investigated for AlGaN/GaN HEMTs. The device current density, transconductance, ft, fmax, noise figure were evaluated for the device with and without thick copper interconnect metal, and the thermal stability test was performed after the device with copper metallization.