Browsing by Author "Yao, Jie-Yi"

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High Performance and Low power Monolithic Three-Dimensional Sub-50 nm Poly Si Thin film transistor (TFTs) Circuits
(2017-05-02)
Wu, Tsung-Ta
;
Huang, Wen-Hsien
;
Yang, Chih-Chao
;
Chen, Hung-Chun
;
Hsieh, Tung-Ying
Development of manufacture trend for TFTs technologies has focused on improving electrical properties of films with the cost reduction to achieve commercialization. To achieve this goal, high-performance sub-50 nm TFTs-based MOSFETs with ON-current (I-on)/subthreshold swing (S.S.) of 181 mu A/mu m/107 mV/dec and 188 mu A/mu m/98 mV/dec for NMOSFETs and PMOSFETs in a monolithic 3D circuit were demonstrated by a low power with low thermal budget process. In addition, a stackable static random access memory (SRAM) integrated with TFTs-based MOSFET with static noise margins (SNM) equals to 390 mV at V-DD = 1.0 V was demonstrated. Overall processes include a low thermal budget via ultra-flat and ultra-thin poly-Si channels by solid state laser crystallization process, chemical-mechanical polishing (CMP) planarization, plasma-enhanced atomic layer deposition (ALD) gate stacking layers and infrared laser activation with a low thermal budget. Detailed material and electrical properties were investigated. The advanced 3D architecture with closely spaced inter-layer dielectrics (ILD) enables high-performance stackable MOSFETs and SRAM for power-saving IoT/mobile products at a low cost or flexible substrate.
Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si
(2013)
Cho, Ta-Chun
;
Lu, Yu-Lun
;
Yao, Jie-Yi
;
Lee, Yao-Jen
;
Sekar, Karuppanan
Effects of low-temperature (approximate to 500 degrees C) microwave annealing (MWA) of Cluster-Carbon (C-7) and Phosphorus implants are compared with rapid thermal annealing (RTA) at 900 and 1000 degrees C for (100) and (110)-Si substrates. MWA annealing resulted in high levels of substitutional Carbon, 1.57% for (100) Si and 0.99% for (110) Si for C-7 implants. Addition of high-dose Phosphorus implants resulted in lower but still useful substitutional Carbon levels, 1.44% for (100) Si and 0.68% for (110) Si after MWA. RTA annealing at higher temperatures resulted in greatly reduced substitutional Carbon levels and deeper Phosphorus junctions. The effects of subsequent anneals by MWA and RTA methods are reported. MWA is shown to be a promising method for high-channel tensile strain in nMOSFETs with a substantially lower thermal budget than RTA. (C) 2013 The Electrochemical Society. All rights reserved.