Browsing by Author "Yao, Jing Neng"

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Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application
(2017-08-01)
Lin, Yueh Chin
;
Huang, Yu Xiang
;
Huang, Gung Ning
;
Wu, Chia Hsun
;
Yao, Jing Neng
This letter reports an E-mode GaN MIS-HEMT using a composite La2O3/HfO2 gate insulator for power device applications. The composite dielectric formed an amorphous LaHfOx layer after post-deposition annealing. The GaN MIS-HEMT with amorphous LaHfOx gate dielectric showed good oxide film quality and excellent HfLaOx/GaN interface properties, as demonstrated by the measured C-V characteristics. Consequently, the E-mode MIS-HEMT was determined to show good V-th stability with only a slight increase in the dynamic R-on after high drain bias stress.
Evaluation of an InAs HEMT with source-connected field plate for high-speed and low-power logic applications
(2019-07-01)
Yao, Jing Neng
;
Lin, Yueh Chin
;
Lin, Min Song
;
Huang, Ting Jui
;
Hsu, Heng Tung
In this study, we have presented a source-connected field plate (SCFP) InAs high electron mobility transistor (HEMT) and evaluated its potential for using in high-speed and low-power logic applications. The fabricated device demonstrated good electrical characteristics including low subthreshold swing (SS) of 76 mV/decade, drain induced barrier lowering (DIBL) of 44 mV/V, I-ON/I-OFF ratio of 2.4x10(4), an off-state gate leakage current of less than 5x10(-6) A/mm and a G(m,max) of 1100 mS/mm at V-DS = 0.5 V. When increasing the drain-source bias (V-DS) to 1.0 V, the G(m,max) increased to 1750 mS/mm with a cut-off frequency of 113 GHz. These results revealed that the fabrication of source-connected field plate InAs HEMTs achieved excellent device performance for high-speed and low-power logic applications.
Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power Applications
(2020-02-01)
Huang, Kuan Ning
;
Lin, Yueh-Chin
;
Lin, Jia-Ching
;
Hsu, Chia Chieh
;
Lee, Jin Hwa
An enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with La2O3/SiO2 gate insulator is investigated for high power application. The La2O3/SiO2 composite oxide formed amorphous La-silicate after post deposition annealing. Good oxide film quality and excellent La-silicate/AlGaN interface properties were achieved as evidenced by the capacitance-voltage (C-V) curves and hysteresis effect of the La-silicate on AlGaN/GaN metal-oxide-semiconductor capacitors. As a result, the E-mode AlGaN/GaN MIS-HEMT with La-silicate gate insulator shows good threshold voltage (V-th) stability and demonstrated only slightly increase in the dynamic on-resistance (R-on) after high drain bias stress test. The device also exhibits high current density of 752 mA/mm, high maximum transconductance of 210 mS/mm, low subthreshold swing of 104 mV/decade, and I-ON/I-OFF = 10(7) when tested at V-DS = 10 V. Furthermore, low on-resistance of 7.6 omega mm, high breakdown voltage of 670 V, and excellent delay time of 4.2 ps were achieved, demonstrating the La-silicate MIS-HEMTs have the potential to be used for power electronic applications.