Browsing by Author "Yeh, Ching-Fa"

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Analysis of pentacene thin film transistors in different atmospheres
(2005)
Wang, Yu-Wu
;
Cheng, Horng-Long
;
Wang, Yi-Kai
;
Hu, Tang-Hsiang
;
Ho, Jia-Chong
This investigation addresses the electrical properties of pentacene-based thin film transistors in air, dry air and high vacuum. A potential barrier model was applied to explain the gate dependent field effect mobility behavior. The results show the trap density in air higher than that in a vacuum.
Electrical characteristics of the HfAlON gate dielectric with interfacial UV-ozone oxide
(2008-01-01)
Chen, Yung-Yu
;
Fu, Wen-Yu
;
Yeh, Ching-Fa
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
In this letter, the electrical properties of a HfAlON dielectric with UV-O-3 interfacial oxide were comprehensively studied and then compared with those of a HfAlON dielectric with interfacial chemical oxide. In the comparison of dielectric characteristics including leakage current density, transconductance, subthreshold swing, saturation drain current, effective electron mobility, and constant voltage stress reliabilities, the results clearly indicate that high-density interfacial UV-O-3 oxide is beneficial in reducing both bulk and interface traps as well as diminishing stress-induced trap generation, and possesses a high potential to be integrated with further high-k. dielectric applications.
Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
(2007-08-20)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Yeh, Jui-Lung
;
Tu, Chun-Hao
The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.