Browsing by Author "Yeh, FS"

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Elimination of dielectric degradation for chemical-mechanical planarization of low-k hydrogen silisesquioxane
(2001-05-01)
Chang, TC
;
Liu, PT
;
Tsai, TM
;
Yeh, FS
;
Tseng, TY
The characteristics of post-chemical mechanical polishing (post-CMP) low-k hydrogen silsesquioxane (HSQ) have been investigated in this work. Dielectric properties of HSQ are damaged by the CMP process. We propose NH3-plasma treatment to improve the characteristics of post-CMP HSQ film. Both of the leakage current and dielectric constant of NH3 plasma-treated HSQ are significantly decreased as compared with those of untreated HSQ. NH3 plasma treatment slightly nitridates the surfaces of the polished HSQ film. The thin nitride layer prevents moisture absorption in the post-CMP HSQ. As a result, the dielectric degradation of HSQ after the CMP process can be effectively recovered using the NH3 plasma treatment.
Integration issues for siloxane-based hydrogen silsesquioxane (HSQ) applied on TFT-LCDs
(2006-03-01)
Chang, TS
;
Chang, TC
;
Liu, PT
;
Chang, TS
;
Yeh, FS
In this study, a low-k material, siloxane-based hydrogen silsesquioxane (HSQ) has been investigated for a passivation dielectric between the transistor and pixel levels in thin-film transistor (TFT) arrays. The characteristics of low-k dielectric film have been studied, especially under visible light illumination and electric operation. Compared with the conventional nitride film (k similar to 7), the HSQ passivation layer (k similar to 2.8) not only lowers the RC time delay in device, but also enhances the brightness of thin-film transistors liquid crystal displays (TFT-LCDs). (c) 2005 Published by Elsevier B.V.