Browsing by Author "Yeh, Feng-Sheng"

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Improvement of hydrogenated amorphous-silicon TFT performances with low-k siloxane-based hydrogen silsesquioxane (HSQ) passivation layer
(2006-11-01)
Chang, Ta-Shan
;
Chang, Ting- Chang
;
Liu, Po-Tsun
;
Chang, Tien-Shan
;
Tu, Chun-Hao
A low-dielectric-constant (low-k)-material siloxanebased hydrogen silsesquioxane (HSQ) is investigated as a passivation layer in bottom-gate hydrogenated amorphous-silicon thin-film transistors (a-Si: H TFTs). The low-k HSQ film passivated on TFT promotes the brightness and aperture ratio of TFT liquid-crystal display due to its high light transmittance and good planarizatiow In addition, the performance of a-Si : H TFT with HSQ passivation has been improved, compared to a conventional silicon nitride (SiNx)-passivated TFT because the hydrogen bonds of HSQ assist the hydrogen incorporation to eliminate the density of states between the back channel and passivation layer. Experimental results exhibit an improved field-effect mobility of 0.57 cm(2)/V center dot s and a subthreshold swing of 0.68 V.
Investigation of the low dielectric siloxane-based hydrogen silsesquioxane (HSQ) as passivation layer on TFT-LCD
(2007-12-03)
Chang, Ta-Shan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tsao, Shu-Wei
;
Yeh, Feng-Sheng
Spin-on low-k passivation is achieved on inverted-staggered back-channel-etched hydrogenated amorphous silicon thin-film transistors (TFT). The low-k passivation material, siloxane-based hydrogen silsesquioxane (HSQ), has been investigated for different process temperatures. Performance is improved with decreased temperature. At 300 degrees C, the TFT performance of HSQ passivation is superior to those of other TFTs. The hydrogen bonds of HSQ assist hydrogen incorporation to eliminate the density of states between the back channel and the passivation layer. The characteristics of HSQ passivated TFT have been studied in this work. (C) 2007 Published by Elsevier B.V.