Browsing by Author "Yeh, Fon-Shan"

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Effect of Ta(2)O(5) Doping on Electrical Characteristics of SrTiO(3) Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta(2)O(5) doping on electrical characteristics of SrTiO(3) (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta(2)O(5)-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V(2) and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
Effect of Ta2O5 Doping on Electrical Characteristics of SrTiO3 Metal-Insulator-Metal Capacitors
(2009-08-01)
Huang, Ching-Chien
;
Cheng, Chun-Hu
;
Liou, Bo-Heng
;
Yeh, Fon-Shan
;
Chin, Albert
The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator-metal (MIM) capacitors was studied for the first time. Using Ta2O5-doped STO dielectrics, an absolute quadratic voltage coefficient of capacitance (VCC-alpha) of 510 ppm/V-2 and a high capacitance density of similar to 20 fF/mu m(2) are achieved. These are approximately one order of magnitude lower than those of the MIM capacitor fabricated using a pure STO. In addition, the degradation of electrical properties (capacitance variation versus voltage, VCC-alpha, and long-term reliability) after electrical stressing is reduced, compared with that of an MIM capacitor fabricated using a pure STO. (C) 2009 The Japan Society of Applied Physics
Low-Power High-Performance Non-Volatile Memory on a Flexible Substrate with Excellent Endurance
(2011-02-15)
Cheng, Chun-Hu
;
Yeh, Fon-Shan
;
Chin, Albert
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Very high performance Ni/GeO(x)/HfON/TaN non-volatile resistive memory is fabricated using the covalently bonded dielectric GeO(x) and metal oxynitride HfON, as well as low cost electrodes. The device shows low set and reset powers, good 85 degrees C retention, and 10(5) endurance, which are near to the characteristics of existing commercial flash memory.
Low-temperature passivation of amorphous-silicon thin-film transistors with supercritical fluids
(2007-07-01)
Tsai, Chih-Tsung
;
Liu, Po-Tsun
;
Chang, Ting-Chang
;
Wang, Chen-Wen
;
Yang, Po-Yu
In this letter, supercritical CO2 (SCCO2) fluids technology is employed for the first time to effectively passivate the defect states in hydrogenated amorphous-silicon thin-film transistors (a-Si:H TFTs) at low temperature (150 degrees C). With the high transport and diffusion properties of SCCO2 fluids, it is proposed to act as a transporter in delivering the H2O molecules into the amorphous-silicon film and repairing defect states by the H2O molecules. In addition, the propyl alcohol is used as the surfactant between nonpolar-SCCO2 fluids and polar-H2O molecules for mingling H2O molecules uniformly with the SCCO2 fluids. After the treatment Of SCCO2 fluids mixed with water and propyl alcohol, the a-Si:H TFT exhibited superior transfer characteristics and lower threshold voltage. The improvement in electrical characteristics could be verified by the significant reduction of density of states in the mobility gap of amorphous-silicon.
Unipolar Ni/GeOx/PbZr0.5Ti0.5O3/TaN Resistive Switching Memory
(2011-12-01)
Chou, Kun-I
;
Cheng, Chun-Hu
;
Chen, Po-Chun
;
Yeh, Fon-Shan
;
Chin, Albert
In this study we propose a resistive random-access memory (RRAM) using stacked GeOx and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeOx/PZT/TaN RRAM shows a large resistance window of >10(2), for 85 degrees C retention, and a good DC cycling of 2000 cycles, which are significantly better than those shown by the single-layer Ni/PZT/TaN RRAM without the covalent-bond-dielectric GeOx. (C) 2011 The Japan Society of Applied Physics