Browsing by Author "Yeh, Han"

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Atomic scale depletion region at one dimensional MoSe2-WSe2 heterointerface
(2018-12-10)
Chu, Yu-Hsun
;
Wang, Li-Hong
;
Lee, Shin-Ye
;
Chen, Hou-Ju
;
Yang, Po-Ya
Lateral heterojunctions based on two dimensional (2D) transition metal dichalcogenides (TMDCs) potentially realize monolayer devices exploiting 2D electronic structures and the functions introduced by the presence of 1D heterointerfaces. Electronic structures of a lateral MoSe2-WSe2 junction have been unveiled using scanning tunneling microscopy and spectroscopy. A smooth and narrow depletion region exists despite a defect-rich heterointerface deviating from the preferred zigzag orientations of the TMDC lattice. From the characteristics of the depletion region, a high carrier concentration and high internal electric fields are inferred, offering to benefit designs of lateral TMDC devices. Published by AIP Publishing.
Distributed Bragg Reflectors as Broadband and Large-Area Platforms for Light-Coupling Enhancement in 2D Transition-Metal Dichalcogenides
(2018-05-16)
Chen, Yen-Chun
;
Yeh, Han
;
Lee, Chien-Ju
;
Chang, Wen-Hao
;
電子物理學系
Two-dimensional (2D) semiconductors, particularly the direct-gap monolayer transition metal dichalcogenides (TMDs), are currently being developed for various atomically thin optoelectronic devices. However, practical applications are hindered by their low quantum efficiencies in light emissions and absorptions. While photonic cavities and metallic plasmonic structures can significantly enhance the light-matter interactions in TMDs, the narrow spectral resonance and the local hot spots considerably limit the applications when broadband and large area are required. Here, we demonstrate that a properly designed distributed Bragg reflector (DBR) can be an ideal platform for light-coupling enhancement in 2D TMDs. The main idea is based on engineering the amplitude and phase of optical reflection from the DBR to produce optimal substrate-induced interference. We show that the TMDs photoluminescence, Raman, and second harmonic generation signals of monolayer WSe2 can be enhanced by a factor of 26, 34, and 58, respectively. The proposed DBR substrates pave the way for developing a range of 2D optoelectronic devices for broadband and large-area applications.
Low-Threshold Plasmonic Lasers on a Single-Crystalline Epitaxial Silver Platform at Telecom Wavelength
(2017-06-01)
Lee, Chien-Ju
;
Yeh, Han
;
Cheng, Fei
;
Su, Ping-Hsiang
;
Her, Tsing-Hua
We report on the first demonstration of metal insulator semiconductor-type plasmonic lasers at the telecom wavelength (similar to 1.3 mu m) using top-down fabricated semiconductor waveguides on single-crystalline metallic platforms formed using epitaxially grown Ag films. The critical role of the Ag film thickness in sustaining. plasmonic lasing at the telecom wavelength is investigated systematically. Low-threshold (0.2 MW/cm(2)) and continuous-wave operation of plasmonic lasing at cryogenic temperatures can be achieved on a 150 nm Ag platform with minimum radiation leakage into the substrate. Plasmonic lasing occurs preferentially through higher-order surface-plasmon-polariton modes, which exhibit a higher mode confinement factor, lower propagation loss, and better field gain coupling. We observed plasmonic lasing up to 200 K under pulsed excitations. The plasmonic lasers on large-area epitaxial Ag films open up a scalable platform for on-chip integrations of plasmonics and optoelectronics at the telecom wavelength.
Monolayer MoS2 Enabled Single-Crystalline Growth of AlN on Si(100) Using Low-Temperature Helicon Sputtering
(2019-04-01)
Hsu, Wei-Fan
;
Lu, Li-Syuan
;
Kuo, Po-Chun
;
Chen, Jie-He
;
Chueh, Wei-Chen
Growing a single-crystalline film on a substrate relies on the compatibility of crystal symmetry and lattice constant between the two materials. Such limitations can be circumvented by introducing van der Waals epitaxy of three-dimensional (3D) crystals on two-dimensional (2D) layered materials. Recently, buffer-assisted growth of III-nitride films on graphene has been demonstrated. However, the low chemical reactivity of graphene surface considerably limits the large-area and single-crystalline growth of planar 3D films on 2D layered materials. Here, we demonstrate that using highly oriented monolayer MoS2 as a buffer layer, single-crystalline AlN thin films can be grown on Si(100) substrates, which possess a different crystal symmetry with the films. The AlN films were grown by helicon sputtering system at low temperature (400 degrees C), showing a very flat surface with a root-mean-square roughness of 1.0 nm and an X-ray rocking curve with a full width at half-maximum of 0.336 degrees, indicating a high-crystalline quality. Because the buffer layer as well as the AlN films were prepared at low temperatures, our results not only pave the way for integrating III-nitride with the Si wafer industry process but also open a new possibility for growing III-nitride thin film on various foreign substrates.
Plasmonic whispering-gallery modes in a semiconductor-insulator-metal hybrid structure
(2015)
Lee, Chien-Ju
;
Yeh, Han
;
Chen, Yen-Chun
;
Wang, Chun-Yuan
;
Gwo, Shangir
We demonstrate a plasmonic cavity based on a hybrid semiconductor-insulator-metal structure, which can support plasmonic whispering-gallery modes (WGMs) in the insulator layer. The hybrid structure consists of a semiconductor microdisk with embedded gain medium on top of a single-crystalline gold flake with a nanometer-thick dielectric gap in between. By optimizing the dielectric gap thickness, it is possible to form coupled modes consisting of both photonic WGM in the microdisk and plasmonic WGM in the dielectric gap, by which a high field-gain overlap and an efficient cavity feedback can be achieved for investigating strong light-matter interactions and laser applications.