Browsing by Author "Yeh, Hsin-Ting"
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Item type:Item, Electron Field Emission Enhancement Based on Al-Doped ZnO Nanorod Arrays With UV Exposure(2018-01-01) ;Wang, Zi-Hao ;Yang, Chih-Chiang ;Yu, Hsin-Chieh ;Yeh, Hsin-TingPeng, Yu-MingIn this paper, Al-doped ZnO nanorods (AZO NRs) were successfully applied on glass substrates through hydrothermal synthesis growth with a fabrication field-emission (FE) device. The enhanced FE properties of AZO NRs were measured. The turn-on fields were reduced by 2.35 and 1.51 V/mu m in the dark and under UV light, and the enhanced field enhancement factors (beta) were 5708 and 10137, respectively. Results show that the FE performances of AZO NRs were enhanced by the combined effect of increased carrier concentration and UV light illumination.Item type:Item, Low-Frequency Noise Performance of Al-Doped ZnO Nanorod Photosensors by a Low-Temperature Hydrothermal Method(2017-08-01) ;Wang, Zi-Hao ;Yu, Hsin-Chieh ;Yang, Chih-Chiang ;Yeh, Hsin-TingSu, Yan-KuinIn this paper, we developed a simple hydrothermal method to synthesize vertically aligned ZnO:Al nanorods (NRs) to fabricate a UV photodetector (PD) on a seed layer/glass substrate. The photo-to-dark current ratio of the ZnO: Al NR PD was approximately 1.4 x 10(3) under 1-V bias and UV light irradiation (380 nm). The calculated responsivity of the fabricated PD was 181 A . W-1, and the UV-to-visible rejection ratio of the PD at 1-V applied bias was 1.51 x 10(3). In addition, flicker noise dominated the noise of the ZnO: Al NR PD. The noise-equivalent power and normalized detectivity of the ZnO:Al NR PD were 1.17 x 10(-11) W and 4.03 x 10(12) cm . Hz(0.5)W(-1), respectively.