Browsing by Author "Yeh, Jui-Lung"

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Enhancement of charge-storage performance in Ni-silicide nanocrystal devices by thermal annealing a Ni-Si-N thin film
(2008)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Chang, Chun-Yen
;
電子工程學系及電子研究所
The stored charge characteristics of Ni-silicide nanocrystals embedded in nitride formed by annealing a Ni-Si-N thin film were studied in this paper. We used X-ray photoelectron spectroscopy, leakage current density, and X-ray diffraction to offer chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Transmission electron microscope analyses revealed nanocrystals embedded in the nitride layer. Nonvolatile Ni-Si nanocrystal memories with 600 degrees C annealing revealed superior electrical characteristics for charge-storage capacity and reliability compared with the memories with 300 and 500 degrees C annealing. In addition, we used energy-band diagrams to explain the significance of surrounding dielectric for reliability. (C) 2008 The Electrochemical Society.
Formation and nonvolatile memory characteristics of multilayer nickel-silicide NCs embedded in nitride layer
(2008-11-01)
Chen, Wei-Ren
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Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Sze, S. M.
;
Chang, Chun-Yen
The authors provided the formation and memory effects of nonvolatile multilayer nickel-silicide nanocrystal memory in this study. This proposed structure can efficiently improve the drawbacks of current floating gate and single-layer nanocrystal memories for the next-generation nonvolatile memory application. The charge trapping layer of multilayer structure was deposited by sputtering a commixed target (Ni(0.3)Si(0.7)) in the argon and nitrogen ambiance, and then used a low temperature rapid thermal annealing to form uniform nanocrystals. Transmission electron microscope images clearly show the multilayer and single-layer nanocrystal structures embedded in SiN(x). X-ray photoelectron spectroscopy and x-ray diffraction also present the chemical states and crystallization of nanocrystals under different annealing temperature treatments. The capacitor with different memory structures was also studied and exhibited hysteresis characteristics after electrical operation. In addition, the multilayer nanocrystals revealed better charge storage ability and reliability than the single-layer nanocrystals. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.3006126]
Formation and nonvolatile memory effect of nickel-oxygen-silicon nanoparticles
(2007-11-26)
Chen, Wei-Ren
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Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Sze, Simon M.
;
Chang, Chun-Yen
This study reveals the formation of nickel-oxygen-silicon nanoparticles with nonvolatile memory effect by sputtering a commixed target in argon and oxygen ambiance. A transmission electron microscope clearly shows the embedded nanoparticles in the silicon oxide and the constituent was examined by x-ray photoelectron spectroscopy. The capacitor structure with embedded nickel-oxygen-silicon nanoparticles was also studied and it exhibited hysteresis characteristics after electrical operation. The memory window and retention of nickel-oxygen-silicon nanoparticles were enough to apply on nonvolatile memory. In addition, a physical mechanism was deduced to expound the role of oxygen in the formation of nickel-oxygen-silicon nanoparticles. (C) 2007 American Institute of Physics.
Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application
(2007-12-15)
Chen, Wei-Ren
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Chang, Ting-Chang
;
Liu, Po-Tsun
;
Tu, Chun-Hao
;
Yeh, Jui-Lung
A new method to fabricate Ge nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application was investigated in this study. The oxidation process nucleated the Ge nanocrystals embedded in the dielectric layer was clearly observed by transmission electron microscope analysis. Moreover, an over-oxidation phenomenon for the formation of GeO2 in this work was found at higher temperature oxidation according to the X-ray photoelectron spectroscopy analysis. The obvious memory window was found in the capacitance-voltage hysteresis curve, and the program efficiency of holes was superior to electrons due to the electronic affinity of GeO2 smaller than silicon substrate for a structure of Ge nanocrystals surrounded with GeO2 layer. Furthermore, the Ge nanocrystals surrounded with GeO2 layer structure has good retention time and endurance. (c) 2007 Elsevier B.V All rights reserved.
Nonvolatile memory characteristics influenced by the different crystallization of Ni-Si and Ni-N nanocrystals
(2008-02-11)
Chen, Wei-Ren
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Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Chang, Chun-Yen
;
Chen, Shih-Ching
The formation of Ni-Si and Ni-N nanocrystals by sputtering a Ni(0.3)Si(0.7) target in argon and nitrogen environment were proposed in this paper. A transmission electron microscope analysis shows the nanocrystals embedded in the nitride layer. X-ray photoelectron spectroscopy and x-ray diffraction also offer the chemical material analysis of nanocrystals with surrounding dielectric and the crystallization of nanocrystals for different thermal annealing treatments. Nonvolatile Ni-Si nanocrystal memories reveal superior electrical characteristics for charge storage capacity and reliability due to the improvement of thermal annealing treatment. In addition, we used energy band diagrams to explain the significance of surrounding dielectric for reliability. (c) 2008 American Institute of Physics.
Nonvolatile memory characteristics of nickel-silicon-nitride nanocrystal
(2007-08-20)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Yeh, Jui-Lung
;
Tu, Chun-Hao
The formation of nickel-silicon-nitride nanocrystals by sputtering a comixed target in the argon and nitrogen environment is proposed in this letter. High resolution transmission electron microscope analysis clearly shows the nanocrystals embedded in the silicon nitride and x-ray photoelectron spectroscopy also shows the chemical material analysis of nanocrystals. The memory window of nickel-silicon-nitride nanocrystals enough to define 1 and 0 states is obviously observed, and a good data retention characteristic to get up to 10 years is exhibited for the nonvolatile memory application.
Reliability characteristics of NiSi nanocrystals embedded in oxide and nitride layers for nonvolatile memory application
(2008-04-14)
Chen, Wei-Ren
;
Chang, Ting-Chang
;
Yeh, Jui-Lung
;
Sze, S. M.
;
Chang, Chun-Yen
The authors provided the reliability characteristics of nonvolatile nickel-silicide nanocrystal memories embedded in oxide and nitride layers for next-generation nonvolatile memory application. The charge trapping layer was deposited by sputtering a commixed target in the argon and oxygen/nitrogen ambiances, and then using a low temperature rapid thermal annealing to form nanocrystals. Transmission electron microscope clearly shows the sharpness and the density of nanocrystals. These proposed memory structures were compared for the charge storage ability, retention, and endurance. In addition, we used a simple simulation of electric field for nonvolatile nanocrystals memory to explain the advantages by using the high-k dielectric. (C) 2008 American Institute of Physics.