Browsing by Author "Yeh, SJ"

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A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
(2000-06-01)
Chang, KM
;
Deng, IC
;
Tsai, YP
;
Wen, CY
;
Yeh, SJ
new novel pretreatment technology for integration of organic low-dielectric material in copper interconnects for ultralarge scale integration applications is developed. Using NH3 plasma treatment, two extremely important advantages were achieved in spin-on organic polymer (SOP), including the reduction of copper diffusion and the improvement of ashing resistance. A copper/SOP/Si capacitor structure is used to study the electrical characteristics of SOP film after ashing treatment or postanneal. Higher barrier capability and better ashing resistance can be achieved by the SOP layer after NH3 plasma treatment. After annealing at 500 degrees C for 60 min, secondary ion mass spectroscopy depths profile shows that the Cu atoms do not penetrate into the SOP when they are pretreated by NH3 plasma. Furthermore after the ashing step, the carbon atoms in the SOP film almost remain the same when they are pretreated by NH3 plasma. On the other hand, the concentration of carbon in as-cured SOP is no longer seen. The reason of improving ashing resistance and better barrier capability was due to the organic polymer film rearranging to form a carbon-containing silicon nitride film. (C) 2000 The Electrochemical Society. S0013-4651(99)10-007-7. Ail rights reserved.
Efficient and bright blue-emitting phosphorescent materials
(2005-10-01)
Yeh, SJ
;
Chen, CT
;
Song, YH
;
Chi, Y
;
Ho, MH
A new type of ancillary ligand for blue-emitting heteroleptic iridium complexes has been successfully developed. New ligands, 3-(trifluoromethyl)-5-( pyridin-2-yl)-1,2,4-triazolate and 5( pyridin-2-yl)-tetrazolate, show stronger blue-shifting power than that of the picolate of Flrpic [ iridium (III) bis(4,6-difluorophenylpyridinato) picolate]. Organic light-emitting diodes (OLEDs) fabricated with a new complex, Flrtaz [ iridium ( III) bis( 4,6-difluorophenylpyridinato)( 5-(pyridine-2-yl)-1,2,4-triazolate) or FlrN4 [(iridium ( III) bis( 4,6-difluorophenylpyridinato)( 5-(pyridin-2-yl)-tetrazolate], as the blue dopant in the host of mCP [ 1,3- bis(9-carbazolyl) benzene], exhibit near-saturated blue electrophosphorescence with Commision Internale de l'Eclairage (CIEx,y) coordinates of (0.14, 0.18) and ( 0.15, 0.24), respectively.
New dopant and host materials for blue-light-emitting phosphorescent organic electroluminescent devices
(2005-02-10)
Yeh, SJ
;
Wu, MF
;
Chen, CT
;
Song, YH
;
Chi, Y
Efficient organic light-emitting diodes (OLEDs) incorporating Ir-III bis(4,6-difluorophenylpyridinato)3-(trifluoromethyl)-5-(pyridin-2-yl)-1,2,4-triazolate (FIrtaz) and Ir-III bis(4,6-difluorophenylpyridinato)-5- (pyridin-2-yl)-1H-tetrazolate (FIrN4) demonstrate higher-purity blue-light emission than the long-known Ir-III bis(4,6-difluorophenylpyridinato)-picolate (FIrpic) phosphorophore. New host materials with higher glass-transition temperatures were also found to enhance the OLED performance.
Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatment
(2000)
Chang, KM
;
Deng, IC
;
Yeh, SJ
;
Yeh, TH
;
電子工程學系及電子研究所
a low dielectric constant material, hydrogen silisequioxane (FOx-16), can successfully suppress Cu diffusion without barrier metal by using NH3 plasma treatment. After NH3 plasma treatment, the hydrogen silisequioxane film with lower leakage current and better barrier ability was achieved. This film almost keeps the same dielectric constant after different plasma exposure times. The decrease in leakage current with more exposure time is due to dangling bonds passivated by -H bonds on porous hydrogen silisequioxane. The better barrier ability is due to a thin nitride film formed an the dielectric.
Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment
(1999-12-01)
Chang, KM
;
Deng, IC
;
Yeh, SJ
;
Tsai, YP
;
電子工程學系及電子研究所
A low dielectric constant material, hydrogen silsesquioxane (FOx-16), can successfully suppress Cu diffusion without barrier metal by using NH3 plasma treatment. After NH3 plasma treatment, the hydrogen silsesquioxane film with lower leakage current and better barrier ability was achieved. This film almost keeps the same dielectric constant after different plasma exposure times. The decrease in leakage current with more exposure time is due to dangling bonds passivated by -H bonds on porous hydrogen silsesquioxane. The better barrier ability is due to a thin nitride film formed on the dielectric. (C) 1999 The Electrochemical Society. S1099-0062(99)06-025-3. All rights reserved.
Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
(2001-11-01)
Chang, KM
;
Tseng, MH
;
Deng, IC
;
Tsai, YP
;
Yeh, SJ
Organic low-k materials have got more attention for reducing integrated circuits RC delay time. A serious problem, in degradation of organic low-k materials is induced by ashing step, In this study, an NH3 plasma-treated spin-on low-k material was used as a dielectric layer for Cu metalization. After NH3 plasma treatment for 10 min, the low dielectric constant films can prevent ashing damage without changing their original dielectric constant. An extra advantage of blocking copper diffusion was achieved after NH3 plasma treatment. The improvement of low dielectric constant films was due to an oxynitride film formed on the surface of low dielectric constant film. This oxynitride film also prevents the Cu diffusion/migration into the underlying dielectric and plays a role of passive diffusion barriers.
Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application
(2000-05-01)
Chang, KM
;
Deng, IC
;
Yeh, SJ
;
Tsai, YP
;
電子工程學系及電子研究所
Hydrogen silsesquioxane, a material with low dielectric constant, can successfully suppress Cu diffusion without using a barrier metal by implementing a NH3 plasma treatment. Lower leakage current and better barrier capability can be achieved by hydrogen silsesquioxane film after NH3 plasma treatment. Having been treated with different plasma exposure rimes. this film can still maintain its original dielectric constant with few changes. The decrease in leakage current with increasing exposure time can be attributed to the following mechanisms: dielectric film becomes denser, dangling bonds are passivated, nitride film is formed on the hydrogen silsesquioxane, and the bulk damage of hydrogen silsesquioxane is annealed out. A thin layer of nitride formed on the dielectric is the cause for having better capability. The thickness of the nitride layer on hydrogen silsesquioxane is about 35 nm, and it can prevent the Cu diffusion/migration into the underlying dielectric. The role of our nitride film is to act as a passive diffusion barrier. (C) 2000 The Electrochemical Society. S0013-4651(99)10-093-4. All rights reserved.