Browsing by Author "Yeh, Y. H."
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Item type:Item, Nickel silicide nanocrystals embedded in SiO2 and HfO2 for nonvolatile memory application(2007-12-03) ;Yang, F. M. ;Chang, T. C. ;Liu, Po-Tsun ;Yeh, Y. H.Yu, Y. C.In this study, a nonvolatile memory device with NiSi2 nanocrystals embedded in the SiO2 and HfO2 layer has been fabricated. A significant memory effect is observed during the characterization of the electrical properties. When a low operating voltage, 4 V, is applied, a significant threshold voltage shift of 1.3 V, is observed. The processing of this structure is compatible with the current manufacturing technology of semiconductor industry. (C) 2007 Published by Elsevier B.V.