Browsing by Author "Yeh, Yen-Wei"

Now showing 1 - 7 of 7

850/940-nm VCSEL for optical communication and 3D sensing
(2018-01-01)
Cheng, Chih-Hsien
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Shen, Chih-Chiang
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Kao, Hsuan-Yun
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Hsieh, Dan-Hua
;
Wang, Huai-Yung
This paper is going to review the state-of-the-art of the high-speed 850/940-nm vertical cavity surface emitting laser (VCSEL), discussing the structural design, mode control and the related data transmission performance. InGaAs/AlGaAs multiple quantum well (MQW) was used to increase the differential gain and photon density in VCSEL. The multiple oxide layers and oxide-confined aperture were well designed in VCSEL to decrease the parasitic capacitance and generate single mode (SM) VCSEL. The maximal modulation bandwidth of 30 GHz was achieved with well-designed VCSEL structure. At the end of the paper, other applications of the near-infrared VCSELs are discussed.
Alternative Strategy to Reduce Surface Recombination for InGaN/GaN Micro-light-Emitting Diodes-Thinning the Quantum Barriers to Manage the Current Spreading
(2020-08-06)
Chang, Le
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Yeh, Yen-Wei
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Hang, Sheng
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Tian, Kangkai
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Kou, Jianquan
Owing to high surface-to-volume ratio, InGaN-based micro-light-emitting diodes (mu LEDs) strongly suffer from surface recombination that is induced by sidewall defects. Moreover, as the chip size decreases, the current spreading will be correspondingly enhanced, which therefore further limits the carrier injection and the external quantum efficiency (EQE). In this work, we suggest reducing the nonradiative recombination rate at sidewall defects by managing the current spreading effect. For that purpose, we properly reduce the vertical resistivity by decreasing the quantum barrier thickness so that the current is less horizontally spreaded to sidewall defects. As a result, much fewer carriers are consumed in the way of surface nonradiative recombination. Our calculated results demonstrate that the suppressed surface nonradiative recombination can better favor the hole injection efficiency. We also fabricate the mu LEDs that are grown on Si substrates, and the measured results are consistent with the numerical calculations, such that the EQE for the proposed mu LEDs with properly thin quantum barriers can be enhanced, thanks to the less current spreading effect and the decreased surface nonradiative recombination.
Design and Fabrication of the Reliable GaN Based Vertical-Cavity Surface-Emitting Laser via Tunnel Junction
(2019-04-01)
Shen, Chih-Chiang
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Lu, Yun-Ting
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Yeh, Yen-Wei
;
Chen, Cheng-Yuan
;
Chen, Yu-Tzu
In this study, we theoretically designed and experimentally fabricated an InGaN vertical-cavity surface-emitting laser (VCSEL) with a tunnel junction (TJ) structure. From numerical simulation results, the optical loss of the device can be reduced by a TJ structure. Additionally, the leakage current of the VCSEL with TJ structure was much smaller than that of the VCSEL with an Indium-Tin-Oxide (ITO) layer. We have been demonstrated that laser output performance is improved by using the TJ structure when compared to the typical VCSEL structure of the ITO layer. The output power obtained at 2.1 mW was enhanced by a factor of 3.5 by the successful reduction of threshold current density (J(th)) from 12 to 8.5 kA/cm(2), and the enlarged slope efficiency was due to less absorption in VCSEL with a TJ structure. Finally, the samples passed the high temperature (70 degrees C) and high operation current (1.5 x J(th)) test for over 500 h.
Design, Modeling, and Fabrication of High-Speed VCSEL with Data Rate up to 50 Gb/s
(2019-08-14)
Shen, Chih-Chiang
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Hsu, Tsung-Chi
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Yeh, Yen-Wei
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Kang, Chieh-Yu
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Lu, Yun-Ting
We have studied the characteristics of frequency response at 850-nm GaAs high-speed vertical-cavity surface-emitting lasers (VCSELs) with different kinds of oxide aperture sizes and cavity length using the PICS3D simulation program. Using 5-mu m oxide aperture sizes, the frequency response behavior can be improved from 18.4 GHz and 15.5 GHz to 21.2 GHz and 19 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C, respectively. Numerical simulation results also suggest that the frequency response performances improved from 21.2 GHz and 19 GHz to 30.5 GHz and 24.5 GHz in a maximum of 3 dB at 25 degrees C and 85 degrees C due to the reduction of cavity length from 3 lambda/2 to lambda/2. Consequently, the high-speed VCSEL devices were fabricated on a modified structure and exhibited 50-Gb/s data rate at 85 degrees C.
High Ambient Contrast Ratio OLED Display with Microlens Array and Cruciform Black Matrices
(2015)
Qin, Zong
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Yeh, Yen-Wei
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Huang, Yi-Pai
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Shieh, Han-Ping David
;
Lee, Kuo-Ch\'ang
Microlens array and cruciform black matrices were adopted to reduce ambient light reflection by 87.8% in OLED display for a 21mm by 21mm eye box while only 19.8% of reflective layer\'s area was occupied.
See-Through Image Blurring of Transparent Organic Light-Emitting Diodes Display: Calculation Method Based on Diffraction and Analysis of Pixel Structures
(2016-11)
Qin, Zong
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Tsai, Yu-Hsiang
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Yeh, Yen-Wei
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Huang, Yi-Pai
;
Shieh, Han-Ping David
In this paper, the issue of see-through image blurring of transparent organic light-emitting diodes display is demonstrated, and a systematic method is proposed to calculate blurred see-through image based on diffraction theory. In the calculation, distances of background object and the viewer are considered to correct Fresnel diffraction and chromatic image can be finally synthesized. Calculated and actually captured see-through images match well by using different background distances and pixel structures to verify, as error ratio of only 2.3% and 4.3%, respectively, in the term of blurred image\'s fringe length. Based on the calculation results, see-through image qualities corresponding to four pixel structures are evaluated and two structures are verified to have better image quality. Finally, higher resolutions that lead to much more significant see-through image blurring are discussed.
Simulation Model of Oxide-Aperture Strain Quantum Well VCSEL
(2019-01-01)
Shih, Hsiang-Yun
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Cho, Yu-Yun
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Hsu, Shun-Chieh
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Huang, Yu-Ming
;
Wang, Shou-Wei
An oxide aperture strained quantum well VCSEL model was built based on measured results. The indium composition of MQW was changed to maximize the frequency response. The simulation result shows that the bandwidth can be improved and reach 30.88GHz.