Browsing by Author "Yen, Cheng-Tyng"

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A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
(2017-04-01)
Tseng, Yuan-Hung
;
Wu, Tsung-Han
;
Tsui, Bing-Yue
;
Yen, Cheng-Tyng
;
Hung, Chien-Chung
The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N-2/N2O flow ratios. The collision partner, N-2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner. (C) 2017 The Japan Society of Applied Physics
A comprehensive study on the oxidation of 4H-SiC in diluted N2O ambient
(2017-04)
Tseng, Yuan-Hung
;
Wu, Tsung-Han
;
Tsui, Bing-Yue
;
Yen, Cheng-Tyng
;
Hung, Chien-Chung
The oxidation mechanism of 4H-SiC in diluted N2O ambient was studied at various temperatures, N2O flow rates, and N-2/N2O flow ratios. The collision partner, N-2 in this study, plays crucial roles in determining the oxidation rate and N-incorporation. According to the proposed oxidation mechanism, lowering the interface state density at lower oxidation temperatures is possible with a high-efficiency collision partner. (C) 2017 The Japan Society of Applied Physics
Strong Fermi-level pinning induced by argon inductively coupled plasma treatment and post-metal deposition annealing on 4H-SiC
(2017-07-01)
Tsui, Bing-Yue
;
Cheng, Jung-Chien
;
Yen, Cheng-Tyng
;
Lee, Chawn-Ying
;
電機學院
The effect of pre-metal deposition cleaning on 4H-SiC Schottky barrier diodes (SBDs) by using Ar ion bombardment in an inductively coupled plasma (ICP) chamber was investigated. The ICP treatment produced a thin and Si-depleted amorphous layer on the SiC surface. Partial graphitization was observed in the amorphous layer after post-metal deposition (PMD) annealing. This interfacial layer strongly pinned the Schottky barrier height (SBH). PMD annealing at 500 degrees C resulted in a constant SBH (approximately 1.1 eV) and narrow SBH distribution (standard deviation < 3 meV). However, the amorphous layer was consumed after 600 degrees C PMD annealing due to interfacial reactions. These results suggest that the Ar ion bombardment technique with a suitable thermal budget can be used to form relatively uniform SBDs. (C) 2017 Elsevier Ltd. All rights reserved.