Browsing by Author "Yen, FY"

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HfAlON n-MOSFETs incorporating low-work function gate using ytterbium silicide
(2006-06-01)
Wu, CH
;
Hung, BF
;
Chin, A
;
Wang, SJ
;
Yen, FY
The authors have fabricated low-temperature fully silicided YbSi2-x-gated n-MOSFETs that used an HfAION gate dielectric with a 1.7-nm EOT. After a 600 degrees C rapid thermal annealing, these devices displayed an effective work function of 4.1 eV and a peak electron mobility of 180 cm(2)/V(.)s. They have additional merit of a process compatible with current very large scale integration fabrication lines.