Browsing by Author "Yen, S. S."

Now showing 1 - 2 of 2

Electrical instability of InGaZnO thin-film transistors with and without titanium sub-oxide layer under light illumination
(2017-03-01)
Chiu, Y. C.
;
Zheng, Z. W.
;
Cheng, C. H.
;
Chen, P. C.
;
Yen, S. S.
The electrical instability behaviors of amorphous indium-gallium-zinc oxide thin-film transistors with and without titanium sub-oxide passivation layer were investigated under light illumination in this study. For the unpassivated IGZO TFT device, in contrast with the dark case, a noticeable increase of the sub-threshold swing was observed when under the illumination environment, which can be attributed to the generation of ionized oxygen vacancies within the alpha-IGZO active layer by high energy photons. For the passivated TFT device, the much smaller SS of similar to 70 mV/dec and high device mobility of >100 cm(2)/Vs at a drive voltage of 3 V with negligible degradation under light illumination are achieved due to the passivation effect of n-type titanium sub-oxide semiconductor, which may create potential application for high-performance display.
High Mobility InGaZnO Thin Film Transistor Using Narrow-Bandgap Titanium-Oxide Semiconductor as Channel Capping Layer
(2014-01-01)
Hsu, H. H.
;
Chiou, P.
;
Chiu, Y. C.
;
Yen, S. S.
;
Chang, C. Y.