Browsing by Author "Yen, T. -J."

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Charge transport mechanism of high-resistive state in RRAM based on SiOx
(2019-01-21)
Gismatulin, A. A.
;
Kruchinin, V. N.
;
Gritsenko, V. A.
;
Prosvirin, I. P.
;
Yen, T. -J.
Nonstoichiometric silicon oxide SiOx is a promising material for developing a new generation of high-speed, reliable flash memory based on the resistive effect. It is necessary to understand the electron transport mechanism of the high-resistive state in SiOx to develop a resistive memory element. At present, it is generally accepted that the charge transport of the high-resistive state in the Resistive Random Access Memory (RRAM) is described by the Frenkel effect. In our work, the charge transport of the high-resistive state in RRAM based on SiOx is analyzed with two contact-limited and five volume-limited charge transport models. It is established that the Schottky effect model, thermally assisted tunneling, the Frenkel model of Coulomb trap ionization, the Makram-Ebeid and Lannoo model of multiphonon isolated trap ionization, and the Nasyrov-Gritsenko model of phonon-assisted tunneling between traps, quantitatively, do not describe the charge transport of the high-resistive state in the RRAM based on SiOx. The Shklovskii-Efros percolation model gives a consistent explanation for the charge transport of the highresistive state in the RRAM based on SiOx at temperatures above room temperature. Published under license by AIP Publishing.