Browsing by Author "Yew, TR"

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A comparative study of Ar and H-2 as carrier gases for the growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition at low temperature
(2001-11-01)
Lee, WH
;
Lin, JC
;
Lee, C
;
Cheng, HC
;
Yew, TR
Electron cyclotron resonance chemical vapor deposition (ECR-CVD) of SiC films from silane and methane gas mixtures at low temperature has been investigated using two different carrier gases, namely, argon and hydrogen. The results obtained are compared. The chemical composition and crystalline microstructure were investigated by Fourier transform infrared spectroscopy (FTIR) and cross-sectional transmission electron microscopy (XTEM), respectively. The results indicate that the carrier gases have a greater influence on the film composition and microstructure as compared to the growth parameters like pressure, power and flow ratio. The deposition mechanism which controls the film characteristics is also presented. (C) 2001 Elsevier Science B.V. All rights reserved.
A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxide
(2002)
Chung, SS
;
Chen, SJ
;
Yang, CK
;
Cheng, SM
;
Lin, SH
For the first time, an improved charge pumping (CP) method has been implemented for direct determination of the interface traps in ultra-short gate length CMOS devices with ultra-thin gate oxide in the direct tunneling regime. The leakage current in a 12-16A gate oxide can be removed from the measured CP current, which enables accurate determination of the interface traps. This method has, been demonstrated successfully for various RTNO grown and RPN treated oxide CMOS devices with very thin gate oxide. Moreover, it can be used as a good monitor of ultra-thin gate oxide process and the evaluations of device reliabilities in relating to the interface trap generation.
Deposition of polycrystalline beta-SiC films on Si substrates at room temperature
(1997-01-13)
Cheng, KL
;
Cheng, HC
;
Lee, WH
;
Lee, CP
;
Liu, CC
Polycrystalline beta-SiC, with grain size up to 1500 Angstrom, has been room-temperature-deposited on Si substrates by electron cyclotron resonance chemical vapor deposition. Microwave power and the hydrogen carrier gas are the key parameters to lower the deposition temperature. According to the results of the cross-sectional transmission electron microscopy, the grain size appeared to be in the same scale as that deposited at 500 degrees C while a large amount of plasma-induced defects were observed in the Si substrate for the room-temperature-deposited samples. Hence, a CH4-plasma treatment prior to the beta-SiC film growth was adopted, forming a SiC-like interfacial layer to suppress the substrate damages. (C) 1997 American Institute of Physics.
Diagnostic techniques for polycrystalline thin film growth
(1996)
Cheng, KL
;
Cheng, HC
;
Yew, TR
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
Effects of a new combination of additives in electroplating solution on the properties of Cu films in ULSI applications
(2000-07-01)
Hu, JC
;
Chang, TC
;
Wu, CW
;
Chen, LJ
;
Hsiung, CS
Effects of a new combination of additives in acid electroplating solution on the properties of Cu thin films have been investigated, The electroplated Cu films exhibit an excellent superfilling behavior. 0.18 mu m vias with an aspect ratio exceeding 5 were filled completely without any void or seam. Strong (111) texture was found for the electroplated Cu films. The resistivity of a 450-nm-thick Cu film was measured to be 1.84 mu Omega cm. (C) 2000 American Vacuum Society. [S0734-2101(00)08004-0].
Effects of CH4/SiH4 flow ratio and microwave power on the growth of beta-SiC on Si by ECR-CVD using CH4/SiH4/Ar at 200 degrees C
(2002-02-22)
Lee, WH
;
Lin, JC
;
Lee, C
;
Cheng, HC
;
Yew, TR
The effects of CH4/SiH4 flow ratio and microwave power on the formation of SiC at 200 degreesC by electron cyclotron resonance chemical vapor deposition is investigated. When the CH4/SiH4 flow ratio is varied from 0.5 to 10, crystalline phase of films vary from polycrystalline silicon to polycrystalline P-SiC and finally to amorphous silicon carbide. However, as the microwave power increases from 300 to 1500 W. the film microstructure changes from polycrystalline Si to amorphous SiC. and finally to polycrystalline beta-SiC. The deposition mechanism which controls the film characteristics is also presented. (C) 2002 Elsevier Science B.V. All rights reserved.
Growth of SiC films on Si(100) by electron cyclotron resonance chemical vapor deposition using SiH4/CH4/H-2
(1995-12-01)
Liu, CC
;
Lee, CP
;
Cheng, KL
;
Cheng, HC
;
Yew, TR
SiC films were deposited on Si(100) substrates by electron cyclotron resonance chemical vapor deposition at 500 degrees C using SiH4/CH4/H-2 gas mixtures. The chemical composition and crystalline microstructure were investigated by x-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy, respectively. The film composition and microstructure are correlated to process variables. The deposition mechanism which controls the film characteristics is presented.
Low temperature deposited highly-conductive N-type SiC thin films
(1997)
Cheng, KL
;
Cheng, HC
;
Lee, WH
;
Lee, C
;
Yew, TR
Low-temperature deposited highly-conductive SiC films has long been a goal for many researchers involved in hetero-junction bipolar transistor, thin-film transistor, solar cell...etc. Were in this paper, we study the influences of the diluted PH3 now rates on SiC film quality as well as electrical properties. PH+ was determined from residual gas analyzer to be the main dopant source. Phosphorous atoms will play a role of enhancing the SiC grain growth and resulting in a smaller film growth rate. Carrier concentrations increase monotonically with the diluted PH; now rates. While Hall mobility first increases than decreases with it due to a combination effect of the impurity scattering and a film quality improvement which dominates when the 1% PH3/H-2 flow rate is above or below 40 seem, respectively.
Polycrystalline beta-SiC film growth on Si by ECR-CVD at 178-500 degrees C
(1996)
Cheng, KL
;
Liu, CC
;
Fu, CM
;
Cheng, HC
;
Lee, C