Browsing by Author "Yi, S. H."

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Extremely High Mobility Ultra-Thin Metal-Oxide with ns(2)np(2) Configuration
(2015)
Shih, C. W.
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Chin, Albert
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Lu, Chun-Fu
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Yi, S. H.
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電子工程學系及電子研究所
To increase the transistor\'s current (I-ON) and decrease the off-state leakage (I-OFF), high-mobility, wide-bandgap and ultra-thin body channel materials are crucial for display, sub-10 nm MOSFET, and brain-mimicking 3D IC. The wide-bandgap ultra-thin-film SnO2 nMOSFET has achieved a high I-ON/I-OFF of > 10(7), and high mobility of >0.5X SiO2/Si device value operated at 1 MV/cm. The high mobility TFT is due to the overlapped orbitals.
Ultra-Low Power Green Electronic Devices
(2015)
Yi, S. H.
;
Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Power consumption is the crucial challenge for electronics. To lower the DC leakage power (P-DC), we applied the high-kappa gate dielectric to CMOS from the physics of Q equivalent to CV. More than 2 orders of magnitude lower P-DC is obtained at small 0.5 similar to 0.9 nm equivalent-oxide-thickness (EOT). The high-kappa dielectric also increases the charge controllability of flash memory and decrease the V-T disturbance by nearly cells, which improves cell density and cost. The AC power (P-AC) can be lowered by using high-mobility Ge CMOS at a lower V-D and 3D IC with a small capacitance, from basic physics of P-AC equivalent to CV(D)(2)f/2.