Browsing by Author "Yi, Shih-Han"

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High Performance Metal-Gate/High-kappa GaN MOSFET With Good Reliability for Both Logic and Power Applications
(2016-09-01)
Yi, Shih-Han
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Ruan, Dun-Bao
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Di, Shaoyan
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Liu, Xiaoyan
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Wu, Yung Hsien
The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (mu C-ox) of 335 mu A/V-2 (410 mA/mm at L-G = 5 mu m and only V-G = 4 V), I-ON/I-OFF of 9 orders of magnitude, small 79 mV/dec sub-threshold slope, a low oxide/GaN interface trap density of 1.2 x 10(10) eV(-1)/cm(2), a low on-resistance of 17.0 Omega-mm, a high breakdown voltage of 720-970 V, and excellent reliability of only 40 mV Delta V-T after 175 degrees C 1000 s stress at maximum drive current. Such excellent device integrities are due to the high-kappa gate dielectric and the high conduction band offset (Delta E-C) of SiO2/GaN. From the calculation results of self-consistent Schrodinger and Poisson equations, the good reliability of GaN MOSFET is related to the confined carrier density within the GaN channel, which is in sharp contrast to the strong wave-function penetration into the high-trap density AlGaN barrier in the AlGaN/GaN HEMT.
High Performance n(+)/p Junction Technology for High Mobility Ge nMOSFET
(2014-01-01)
Chin, Albert
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Yi, Shih-Han
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
Power consumption is the most crucial challenge for advanced IC with billions of transistors. High mobility Ge CMOS is one of the promising candidates to further lower the power consumption. Unfortunately, the ohmic contact in Ge nMOSFET suffers from Fermi-level pinning to valance band (E-V). It is also hard to form n(+)/p Ge junction by standard ion implantation due to the poor dopant activation by rapid thermal annealing (RTA) and fast impurity diffusion. Here high performance metal-gate/high-kappa/(111)-Ge nMOSFET was achieved with good 1.05 junction ideality factor (n), large similar to 5 orders on/off junction current, and higher mobility than SiO2/Si data at wide range carrier density (N-s) at small 0.85 nm equivalent-oxide thickness (EOT). The excellent n(+)/p Ge junction is attributed to the fast 30-ns laser annealing (LA) and YbGe2-x/n-Ge contact with less Fermi-level pinning.