Browsing by Author "Yi-Chang, Edward"

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HfO2/AIN/ln(0.53)Ga(0.47)As MOS Devices Electrical Properties and Reliability Studies
(2016-01-01)
Yi-Chang, Edward
;
Quang-Ho Luc
;
Huy-Binh Do
;
Chang, Po-Chun
;
Lin, Yueh-Chin
In this article, we demonstrate plasma-enhanced atomic layer deposition (PEALD) as an effective passivation technique to establish high interfacial quality of high-kllnGaAs structures. Performing PEALD-AlN as an interfacial passivation layer (IPL), excellent capacitance-voltage (C-V) characteristics have been achieved for the HfO2/n, p-In0.53Ga0.47As MOSCAPs. The effects of AlN-IPL on the effective work function (EWF) of metal and band alignment of the HfO2/AlN/In0.53Ga0.47As structure have also been investigated. In addition, the multilayer TiNi alloys were applied as gate dielectric for a suitable metal EWF with a small work function variation (WFV). A sub-nm equivalent oxide thickness (EOT) HfO2/AlN/In0.53Ga0.47As MOS device with low density of interface states and low leakage current density was obtained utilizing AlN-IPL and post remote-plasma (PRP) gas as pre- and post-gate treatments in an in-situ ALD process. The device performance and reliability of HfO2/AlN/In0.53Ga0.47As nMOSFETs with in-situ PEALD treatments have also been characterized.
The growth of pine-leaf-like hierarchical SnO2 nanostructures
(2014-01-01)
Dee, Chang Fu
;
Tiong, Teck Yaw
;
Varghese, Binni
;
Sow, Chorng-Haur
;
Wong, Yuan-Yee
Pine-leaf-like SnO2 hierarchical nanostructures (NSs) were grown by a two-step vapour transport deposition process with a combination of vapour-solid and vapour-liquid-solid mechanisms at the primary and secondary processes, respectively. This type of hierarchical structure consisted of SnO2 trunk with homo-branching nanowires (NWs). The branched NWs connected the trunk NWs at included angles of 56 degrees and 90 degrees for two different types of hierarchical NSs. Based on the thermodynamic calculation, the formation of branched NWs at those angles are all energetically favourable.
The growth of pine-leaf-like hierarchical SnO2 nanostructures
(2014-01-01)
Dee, Chang Fu
;
Tiong, Teck Yaw
;
Varghese, Binni
;
Sow, Chorng-Haur
;
Wong, Yuan-Yee
Pine-leaf-like SnO2 hierarchical nanostructures (NSs) were grown by a two-step vapour transport deposition process with a combination of vapour-solid and vapour-liquid-solid mechanisms at the primary and secondary processes, respectively. This type of hierarchical structure consisted of SnO2 trunk with homo-branching nanowires (NWs). The branched NWs connected the trunk NWs at included angles of 56 degrees and 90 degrees for two different types of hierarchical NSs. Based on the thermodynamic calculation, the formation of branched NWs at those angles are all energetically favourable.