Browsing by Author "Yi-Hsien LIN"

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STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE STRUCTURE
(2017-08-03)
Steve S. CHUNG
;
E-Ray HSIEH
;
Yi-Hsien LIN
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a source structure at least partially in a semiconductor substrate. The semiconductor device structure also includes a channel structure over the semiconductor substrate. The source structure is partially covered by the channel structure. The semiconductor device structure further includes a drain structure covering the channel structure. The drain structure and the source structure have different conductivity types. A portion of the channel structure is sandwiched between the source structure and the drain structure. In addition, the semiconductor device structure includes a gate stack partially covering the channel structure.