Browsing by Author "Yoon, D."

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260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology
(2017-02-02)
Yoon, D.
;
Seo, M. -G.
;
Song, K.
;
Kaynak, M.
;
Tillack, B.
A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 x 160 m(2) excluding Baluns and probing pads.
645-GHz InP heterojunction bipolar transistor harmonic oscillator
(2017-10-26)
Yun, J.
;
Kim, J.
;
Yoon, D.
;
Rieh, J. -S.
;
交大名義發表
645-GHz signal generation with a harmonic oscillator based on a 250-nm InP heterojunction bipolar transistor technology is demonstrated. The oscillator is based on the common-base cross-coupled topology, generating a second harmonic signal through the push-push operation. The fabricated oscillator exhibits oscillation frequencies ranging from 561.5 to 645.1 GHz with bias variation. The measured peak output power is -17.4 dBm with a dc power dissipation of 49.3 mW (dc-to-RF efficiency of 0.04%). Additionally, terahertz imaging was successfully demonstrated with the developed oscillator employed as a signal source.