Browsing by Author "You, Bo"

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A Method to Determine the Located Region of Lateral Trap Position by Analysis of Three-Level Random Telegraph Signals in n-MOSFETs
(2015-01-01)
Chen, Ching-En
;
Chang, Ting-Chang
;
You, Bo
;
Tsai, Jyun-Yu
;
Lo, Wen-Hung
This paper introduces a method to determine the located region of trap position by the analysis of three-level random telegraph signal (RTS) in partially-depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect-transistors. For the cases of two traps, the average time at the 2nd level ((12)) is composed of average emission time of one trap and average capture time of the other. Comparison and analysis of (tau(2)) curves varying with gate voltage in RTS measurements with and without interchanged source/drain can clarify the located regions of the two traps. Moreover, the simplified equations are also considered and used to confirm the trap positions. (C) 2015 The Electrochemical Society. All rights reserved.
Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics
(2016-04)
Chen, Ching-En
;
Chang, Ting-Chang
;
You, Bo
;
Tsai, Jyun-Yu
;
Lo, Wen-Hung
This letter investigates the oxide trap properties in n-channel metal-oxide-semiconductor field-effect transistors with HfO2 and Hf(1-x)ZrxO(2)/metal gate-stacks by an analysis of random telegraph signals. According to the multiphonon emission theory, the extracted relaxation energies show gate voltage dependence in devices with HfO2-based stacks. This dependence results from the different strengths of vibrations of the nearest neighbor Hf atoms of the oxygen vacancy in the immediate vicinity of the oxide trap. Furthermore, this dependence also induces an abnormal gate voltage dependence in terms of the activation energy required for electron capture. These results are confirmed by comparisons between two HfO2-based devices (HfO2 and Hf(1-x)ZrxO(2)).
Investigation of Lateral Trap Position by Random Telegraph Signal Analysis in Moderate Inversion in n-Channel MOSFETs
(2013)
Chen, Ching-En
;
Chang, Ting-Chang
;
You, Bo
;
Lo, Wen-Hung
;
Ho, Szu-Han
This paper investigates the trap position by random telegraph signal (RTS) analysis in moderate inversion in partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors. In the diffusion current-dominated region, the electron concentration distribution is more non-uniform along the channel than the one in the drift current-dominated region. In the diffusion region, the application of drain (source) voltage can influence the potential at the drain (source) side only. Accordingly, the position of oxide trap can be further clarified using RTS measurements to compare both the capture times as well as the relative channel current amplitudes of devices with and without interchanged source/drain. (C) 2013 The Electrochemical Society. All rights reserved.
On the Origin of Anomalous OffCurrent Under Hot Carrier Stress in p-Channel DDDMOS Transistors With STI Structure
(2014-06-01)
Chen, Ching-En
;
Chang, Ting-Chang
;
Chen, Hua-Mao
;
You, Bo
;
Yang, Kai-Hsiang
This letter investigates the abnormal OFF-current behavior induced by hot carrier stress (HCS) in p-channel double diffused drain metal-oxide-semiconductor transistors with a shallow trench isolation (STI) structure. According to ISE-TCAD simulation, the electric field at the drain-side corners of the high-voltage n-well (HVNW) adjacent to the STI trench is stronger than the electric field in the channel center in width direction. Moreover, because a nitride layer acts as a buffer in STI, the electrons generated by impact ionization at the corners of the HVNW can be easily trapped in the nitride layer or at the liner oxide/nitride layer interface. Furthermore, the extension of electron trapping in STI from drain to source during HCS forms the OFF-current conductive path. Based on the charge pumping measurements at different operation conditions, this path formation is further demonstrated by the comparisons of charge pumping measurements between initial state and after HCS.