Browsing by Author "You, JW"

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Excess low-frequency noise in ultrathin oxide n-MOSFETs arising from valence-band electron tunneling
(2005-09-01)
Wu, JW
;
You, JW
;
Ma, HC
;
Cheng, CC
;
Hsu, CF
Low-frequency flicker noise in analog n-MOSFETs with 15-angstrom gate oxide is investigated. A new noise generation mechanism resulting from valence-band electron tunneling is proposed. In strong inversion conditions, valence-band electron tunneling from Si substrate to polysilicon gate takes place and results in the splitting of electron and hole quasi-Fermi-levels in the channel. The excess low-frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi-levels. Random telegraph signals due to the capture of channel electrons and holes is characterized in a small area device to support our model.
Low frequency noise degradation in ultra-thin oxide (I5A) analog n-MOSFETs resulting from valence-band tunneling
(2005)
Wu, JW
;
You, JW
;
Ma, HC
;
Cheng, CC
;
Hsu, C
Abnormal increase of low frequency flicker noise in analog n-MOSFETs with gate oxide in valence band tunneling domain is investigated. In 15 angstrom oxide devices, valence-band electron tunneling from Si substrate to poly-gate occurs at a positive gate voltage and results in the splitting of electron and hole quasi Fermi-levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi Fermilevels. The trap capture and emission times in valence band tunneling domain are extracted from random telegraph signal. The dependence of measured trap times on gate voltage is consistent with our proposed model.
Valence-band tunneling induced low frequency noise in ultrathin oxide (15 angstrom) n-type metal-oxide-semiconductor field effect transistors
(2004-11-22)
Wu, JW
;
You, JW
;
Ma, HC
;
Cheng, CC
;
Chang, CS
Low frequency flicker noise in n-type metal-oxide-semiconductor field effect transistors (n-MOSFETs) with 15 Angstrom gate oxide is investigated. A noise generation mechanism resulting from valence band tunneling is proposed. In strong inversion condition, valence-band electron tunneling takes place and results in the splitting of electron and hole quasi-Fermi levels in the channel. The excess low frequency noise is attributed to electron and hole recombination at interface traps between the two quasi-Fermi levels. Random telegraph signal in a small area device is characterized to support our model. (C) 2004 American Institute of Physics.