Browsing by Author "Young, JC"

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Bistable resistive switching of a sputter-deposited Cr-doped SrZrO3 memory film
(2005-06-01)
Liu, CY
;
Wu, PH
;
Wang, A
;
Jang, WY
;
Young, JC
Sputter-deposited Cr-doped SrZrO3-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L-state was five orders of magnitude higher than that of L- to H-state. The transition from H- to L-state was the restricted part for reversible switching operation. The difference in transition time of the two states should be related to the respective conduction mechanisms.
Memory effect of sol-gel derived V-doped SrZrO3 thin films
(2006-01-03)
Liu, CY
;
Chuang, CC
;
Chen, JS
;
Wang, A
;
Jang, WY
V-doped SrZrO3 (SZO) thin films on LaNiO3/SiO2/Si substrate are synthesized by sol-gel method to form metal-insulator-metal (MIM) sandwich structure. The physical and electrical properties of the MIM device are studied. The structure and surface morphology of the SZO films are also characterized by X-ray diffraction and scanning electron microscopy. Such a device has the bistable switching properties of current-voltage characteristics. The resistive switching between high state and low state can also be operated with voltage pulses. The device with the properties of long retention time and non-destructive readout is expected to be suitable for nonvolatile memory application. (c) 2005 Elsevier B.V. All rights reserved.