Browsing by Author "Young, RL"

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Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
(1996-09-15)
Lee, WI
;
Young, RL
;
Chen, WK
;
交大名義發表
;
友訊交大聯合研發中心
A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
(1996-09-15)
Lee, WI
;
Young, RL
;
Chen, WK
;
電子物理學系
;
Department of Electrophysics
A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
Defects and degradation in ZnO varistor
(1996-07-22)
Lee, WI
;
Young, RL
;
交大名義發表
;
友訊交大聯合研發中心
;
National Chiao Tung University
A systematic study of the defects in ZnO has been performed. The two commonly observed levels (L1, L2), located at around 0.15 and 0.24 eV under the conduction band, have been identified as native defects. The deep level transient spectroscopy depth profiling technique is applied on multilayer-chip-type ZnO varistors to determine the distribution profiles of these two levels. With higher densities near the grain boundary, L2 is unlikely to be zinc interstitials as some previous studies have assigned, Both L1 and L2 show no apparent correlation with the device degradation process. Instead, a complex defect or interface trap, related to impurities in the starting material, exhibits a much stronger correlation with the ZnO varistor's stability. (C) 1996 American Institute of Physics.