Browsing by Author "Yu, Chang-Chin"

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Double Photonic Quasi-Crystal Structure Effect on GaN-Based Vertical-Injection Light-Emitting Diodes
(2010)
Huang, Hung-Wen
;
Lin, Chung-Hsiang
;
Huang, Zhi-Kai
;
Lee, Kang-Yuan
;
Yu, Chang-Chin
GaN-based thin-film vertical-injection light-emitting diodes (VLEDs) with a double 12-fold photonic quasi-crystal (PQC) structure formed using nanoimprint lithography (NIL) and inductively coupled plasma reactive-ion etching (ICP-RIE) are fabricated and presented. At a driving current of 20 mA and with a chip size of 350 x 350 mu m(2), our thin-film LED with a double-12-fold-PQC structure gave a light output power of 40.5 mW, which is an increase of 77% when compared with the output power of a VLED without a PQC structure at a peak wavelength of 460 nm. In addition, the corresponding light radiation patterns show a narrow beam shape due to the strong guided light extraction on the n-GaN surface and the reflected light effect of the PQC structure formed in the vertical direction on the p-GaN surface. (C) 2010 The Japan Society of Applied Physics
Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns
(2009-11-01)
Huang, Hung-Wen
;
Lin, Chung-Hsiang
;
Huang, Zhi-Kai
;
Lee, Kang-Yuan
;
Yu, Chang-Chin
The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices.
Investigation of InGaN/GaN light emitting diodes with nano-roughened surface by excimer laser etching method
(2007-01-25)
Huang, Hung-Wen
;
Kao, Chih-Chiang
;
Chu, Jung-Tang
;
Wang, Wei-Chih
;
Lu, Tien-Chang
The InGaN/GaN light emitting diodes (LEDs) with a nano-roughened top p-GaN surface fabricated by using Ni nano-masks and laser etching methods were demonstrated and analyzed. The experiment results observed the maximum light output power of the InGaN/GaN LED with a nano-roughened top p-GaN surface etched with the laser energy of 300 mJ/cm(2) was 1.55 times higher than that of a conventional LED, and the wall-plug efficiency was enhanced 68% at 20 mA. The series resistance of InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface. (c) 2006 Elsevier B.V. All rights reserved.