Browsing by Author "Yu, Cheng-Yu"

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A CAN-Based Design for the Control of Electric Vehicle
(2014)
Liaw, Der-Cherng
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Yu, Cheng-Yu
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Wu, Kuo-Chen
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電機工程學系
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Department of Electrical and Computer Engineering
Due to the development of the advanced technologies, in the recent years, electronic devices for the communication and computer engineering have been considered to implement the so-called "X-by-Wire" scheme for steering control and braking control of the vehicles. It is known that the weight reduction of vehicle systems can decrease the power consumption when the traditional mechanical components can be replaced by electronic devices. Thus, X-by-wire system will be a trend in the automotive industry for saving energy. An event trigger design for vehicle control is proposed in this paper for vehicle control by using the protocol of Controller Area Network (CAN). The proposed design covers the development of CAN communication node, which is developed by using microprocessor chip Microchip PIC18F4585 and MCP2551 CAN transceiver. In addition, an interactive GUI-based utility program developer is also built up for user to easily develop the required function call to cope with the design specification. A wireless electric-driven control vehicle is served as a platform to verify the design of drive-by-wire and brake-by-wire operations. Experimental results demonstrate the success of the proposed design.
Improving Interface State Density and Thermal Stability of High-kappa Gate Stack Through High-Vacuum Annealing on Si0.5Ge0.5
(2019-05-01)
Lee, Wei-Li
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Yu, Cheng-Yu
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Zhang, Jun-Lin
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Luo, Guang-Li
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Chien, Chao-Hsin
We fabricated HfO2-based gate stacks on epi-Si0.5Ge0.5 substrates and investigated the effect of thermal treatment on their structural and electrical properties at varying temperatures and pressures in oxygen ambient. The thermal treatment process led to severe degradation of interface quality as the temperature increased. Material analyses indicated that annealing in oxygen ambient resulted in oxygen diffusion from the high-k material to the SiGe surface, causing undesirable SiGe reoxidation. In high-vacuum annealing, an interface state density of approximately 1.4 x 10(11) eV(-1) cm(-2) and a thermal stability of up to 500 degrees C were achieved for the gate stack on SiGe.