Browsing by Author "Yu, Chien-Lin"

Now showing 1 - 3 of 3

Investigation and Comparison of Design Space for Ultra-Thin-Body GeOI/SOI Negative Capacitance FETs
(2017-01-01)
Lee, Ho-Pei
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Yu, Chien-Lin
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You, Wei-Xiang
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Su, Pin
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電子工程學系及電子研究所
Investigation of Fin-Width Sensitivity of Threshold Voltage for InGaAs and Si Negative-Capacitance FinFETs Considering Quantum-Confinement Effect
(2019-06-01)
Huang, Shih-En
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Yu, Chien-Lin
;
Su, Pin
;
電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
This paper investigates the fin-width (W-Fin) sensitivity of threshold voltage (V-T) for InGaAs and Si channel negative-capacitance FinFETs (NC-FinFETs) using a theoretically derived quantum subthreshold model corroborated with TCAD numerical simulation. Our study indicates that due to the action of negative capacitance, the NC-FinFET possesses smaller VT sensitivity to W-Fin than the FinFET counterpart. In addition, we point out and demonstrate that a device design with higher internal voltage amplification can be utilized to further reduce the V-T sensitivity to W-Fin for NC-FinFETs. Our study may provide insights for future scaling of FinFETs.
Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process Variations
(2017-01-01)
Wu, Shu-Hua
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Yu, Chien-Lin
;
Yu, Chang-Hung
;
Su, Pin
;
電子工程學系及電子研究所
This paper investigates the intrinsic drain-induced barrier lowering (DIBL) characteristics of highly-scaled tri-gate n-MOSFETs with InGaAs channel based on ITRS 2021 technology node through numerical simulation corroborated with theoretical calculation. This paper indicates that, when studying short-channel effects in III-V FETs, one has to account for quantum-confinement, or else predictions will be pessimistic. Due to 2-D quantum-confinement, the DIBL of the InGaAs tri-gate devices can be significantly suppressed and be comparable to the Si counterpart. Besides, for highly-scaled InGaAs tri-gate NFETs, the impact of buried-oxide thickness on DIBL becomes minor, and the DIBL sensitivity to the fin-width and gate-length variations can also be suppressed by the quantum-confinement effect. This paper may provide insights for tri-gate device design using III-V high-mobility channel materials.