Browsing by Author "Yu, Edward T."

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Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
(2014-02-01)
Ji, Li
;
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Tsai, Tsung-Ming
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
(2014)
Ji, Li
;
Chang, Yao-Feng
;
Fowler, Burt
;
Chen, Ying-Chen
;
Tsai, Tsung-Ming