Browsing by Author "Yu, Pei-chen"
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Item type:Item, Direct near-field mapping of photoelectric response induced by localized surface plasmon of silver nano-islands on a silicon solar cell(2012) ;Yang, Cheng-Ying ;Chen, Ting-Gang ;Chiang, Chien-Lang ;Liou, Yi-YingTsai, Wen-CheWe investigate the possibility to enhance the absorption in solar cells by employing localized plasmon polaritons excited in metallic nanostructure. one possible mechanism for increased absorption for the presence of the metallic nanostructure are the giant near-field enhancement. The localized near-field enhancement of electric field is near the surface of nanostructure within several ten nanometers. To observed the effect of localized surface Plasmon, the photoelectric conversion characteristics of a solar cell with metal nanostructure are investigated by using an illumination-collection mode scanning near-field optical microscopy and near-field optical beam induced current (NOBIC) technique.Item type:Item, Low-Temperature Growth of Hydrogenated Amorphous Silicon Carbide Solar Cell by Inductively Coupled Plasma Deposition Toward High Conversion Efficiency in Indoor Lighting(2017-10-05) ;Kao, Ming-Hsuan ;Shen, Chang-Hong ;Yu, Pei-chen ;Huang, Wen-HsienChueh, Yu-LunA p-a-SiC:H window layer was used in amorphous Si thin film solar cells to boost the conversion efficiency in an indoor lighting of 500 lx. The p-a-SiC: H window layer/p-a-Si:H buffer layer scheme moderates the abrupt band bending across the p/i interface for the enhancement of V-OC, J(SC) and FF in the solar spectra of short wavelengths. The optimized thickness of i-a-Si:H absorber layer is 400 nm to achieve the conversion efficiency of similar to 9.58% in an AM1.5 G solar spectrum. However, the optimized thickness of the absorber layer can be changed from 400 to 600 nm in the indoor lighting of 500 lx, exhibiting the maximum output power of 25.56 mu W/cm(2). Furthermore, various durability tests with excellent performance were investigated, which are significantly beneficial to harvest the indoor lights for applications in the self-powered internet of thing (IoT).Item type:Item, Performance Enhancement of A GaAs Solar Cell with Colloidal Quantum Dots Embedded in Trenches(2017-01-01) ;Shu, Chia-Jhe ;Huang, Yu-Ming ;Hsu, Shun-Chieh ;Shu, Jinn-KongTsai, Jia-LinA hybrid colloidal quantum dot (CQD) single junction GaAs solar cell was fabricated and measured. The CQDs are cast into the different sizes of trenches on the device surface. The introduction of CQD layer brings wide-range EQE enhancement, particularly in the ultra-violet band. The analysis reveals possible luminescent down-shifting effect due to our embedded quantum dots. As high as 2 times of EQE enhancement can be observed at specific short wavelength.