Browsing by Author "Yu, S. Y."

Now showing 1 - 4 of 4

Formation of In(2)O(3) nanorings on Si substrates
(2010-11-01)
Hsin, C. L.
;
Yu, S. Y.
;
Huang, C. W.
;
Wu, W. W.
;
材料科學與工程學系
A new approach to form the In(2)O(3) nanorings (NRs) has been proven by tailoring the difference between property of metal and metal oxide. The formation process of the In(2)O(3) NRs is proposed to be resulted form a subtle competition between the oxidation and evaporation of indium at the rim and center, respectively. Patterned In(2)O(3) NRs have been grown on (001) Si substrates in combination with nanosphere lithography. The size and morphology of the NRs can be controlled by the size of polystyrene nanospheres and the thickness of indium layer. The optical property measurements showed that the In(2)O(3) NRs are sensitive in absorption and emission of light between 600 and 622 nm in wavelength. The patterned In(2)O(3) NRs on silicon are advantageous for fabricating optical-response photonic devices at the desired locations and direct integration to the silicon-based photonic devices with current processing technology. (c) 2010 American Institute of Physics. [doi:10.1063/1.3511539]
Formation of In2O3 nanorings on Si substrates
(2010-11-01)
Hsin, C. L.
;
Yu, S. Y.
;
Huang, C. W.
;
Wu, W. W.
;
材料科學與工程學系
A new approach to form the In2O3 nanorings (NRs) has been proven by tailoring the difference between property of metal and metal oxide. The formation process of the In2O3 NRs is proposed to be resulted form a subtle competition between the oxidation and evaporation of indium at the rim and center, respectively. Patterned In2O3 NRs have been grown on (001) Si substrates in combination with nanosphere lithography. The size and morphology of the NRs can be controlled by the size of polystyrene nanospheres and the thickness of indium layer. The optical property measurements showed that the In2O3 NRs are sensitive in absorption and emission of light between 600 and 622 nm in wavelength. The patterned In2O3 NRs on silicon are advantageous for fabricating optical-response photonic devices at the desired locations and direct integration to the silicon-based photonic devices with current processing technology. (c) 2010 American Institute of Physics. [doi:10.1063/1.3511539]
Growth of Multiple Metal/Semiconductor Nanoheterostructures through Point and Line Contact Reactions
(2010-10-01)
Wu, W. W.
;
Lu, K. C.
;
Wang, C. W.
;
Hsieh, H. Y.
;
Chen, S. Y.
Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale Here, we report efficient and unique methods, point and line contact reactions on Si nanowtres, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NISI and Si with very sharp interfaces were produced in a Si nanowire Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NISI grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni acorns within a Si nanowire. The growth of NISI stops as the amount of Ni in the Ni nanodots is consumed Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si. we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices Unlike the point contact reaction, suicide growth starts at the contact area in the line contact reaction, the different silicide formation modes resulting from point and line contact reactions are compared and analyzed A mechanism on the basis of flux divergence is proposed for controlling the growth of the nanomultiheterostructures
Growth of Multiple Metal/Semiconductor Nanoheterostructures through Point and Line Contact Reactions
(2010-10-01)
Wu, W. W.
;
Lu, K. C.
;
Wang, C. W.
;
Hsieh, H. Y.
;
Chen, S. Y.
Forming functional circuit components in future nanotechnology requires systematic studies of solid-state chemical reactions in the nanoscale Here, we report efficient and unique methods, point and line contact reactions on Si nanowtres, fabricating high quality and quantity of multiple nanoheterostructures of NiSi/Si and investigation of NiSi formation in nanoscale By using the point contact reaction between several Ni nanodots and a Si nanowire carried out in situ in an ultrahigh vacuum transmission electron microscopy, multiple sections of single-crystal NISI and Si with very sharp interfaces were produced in a Si nanowire Owing to the supply limited point contact reaction, we propose that the nucleation and growth of the sugar cane-type NISI grains start at the middle of the point contacts between two Ni nanodots and a Si nanowire The reaction happens by the dissolution of Ni into the Si nanowire at the point contacts and by interstitial diffusion of Ni acorns within a Si nanowire. The growth of NISI stops as the amount of Ni in the Ni nanodots is consumed Additionally, without lithography, utilizing the line contact reaction between PS nanosphere-mediated Ni nanopatterns and a nanowire of Si. we have fabricated periodic multi-NiSi/Si/NiSi heterostructure nanonowires that may enhance the development of circuit elements in nanoscale electronic devices Unlike the point contact reaction, suicide growth starts at the contact area in the line contact reaction, the different silicide formation modes resulting from point and line contact reactions are compared and analyzed A mechanism on the basis of flux divergence is proposed for controlling the growth of the nanomultiheterostructures