Browsing by Author "Yu, SY"

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A simple dispersion measurement of fiber gratings by interferometric technique
(2006-01-01)
Sheu, LG
;
Chen, JM
;
Yu, SY
;
Hsu, KC
;
Tsai, MC
A simple dispersion measurement of fiber gratings using an un-balanced Michelson interferometer is proposed. A broadband source and an optical spectrum analyzer are used to scan the interference spectrum, and then the group time delay can be obtained rapidly by Fourier transform processing the interference spectrum. We measured the group time delays of a uniform-period FBG, a chirped FBG, an arrayed-waveguide grating interleaver, and a thin-film filter type OADM by an un-balanced Michelson and Mach-Zehnder interferometers, respectively. The experimental results excellent match the measured results of the optical network analyzer. The experimental repeatability is shown to be better than 1ps.
Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
(1997-11-01)
Liu, HW
;
Lai, WK
;
Yu, SY
;
Huang, SC
;
Cheng, HC
A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes, The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance. (C) 1997 Elsevier Science S.A.
Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
(1997-11-01)
Liu, HW
;
Lai, WK
;
Yu, SY
;
Huang, SC
;
Cheng, HC
A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes, The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance. (C) 1997 Elsevier Science S.A.
Formation and properties of roughened poly-Si electrodes for high-density DRAMs
(1997)
Liu, HW
;
Lin, ZJ
;
Yu, SY
;
Huang, SC
;
Cheng, SC
A novel structure, based upon phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and the standard RCA cleaning process, has been demonstrated as the bottom electrodes of DRAMs(1) stacked capacitors. After the H3PO4 treatment and the RCA cleaning process, micro-islands are formed on the poly-Si surface of the electrodes. For the capacitors with this novel structure, the capacitance value is 18.17 fF/mu m(2) and the effective oxide thickness is 18.9 Angstrom in comparison with conventional capacitors of 5.77 fF/mu m(2) and 59.5 Angstrom. The roughened poly-Si electrode can achieve a surface enlargement of 3.15 times. The leakage current density at +1.65V and -1.65V are 7.24 x 10(-8) A/cm(2) and -3.31 x 10(-8) A/cm(2), respectively, fulfilling the requirements of 256Mb DRAMs. Weibull plots of time-zero-dielectric-breakdown (TZDB) characteristics under ramping voltage test also show tight distribution and good electrical properties. It indicates that the phosphorus-implanted poly-Si films etched by H3PO4 and then cleaned with the standard RCA process can easily and simply increase the surface area and have good electrical properties fulfilling the requirements of 256Mb DRAMs and beyond.