Browsing by Author "Yu, Sung-Chu"
Now showing 1 - 4 of 4
- Results Per Page
- Sort Options
Item type:Item, A Flexible Inductive Coil Tag for Household Two-Wire Current Sensing Applications(2012-06-01) ;Chen, Yung-Chang ;Yu, Sung-Chu ;Cheng, Shih-Hsien ;Cheng, Yu-Ting電子工程學系及電子研究所This paper presents a flexible inductive coil tag for sensing the electric current in the two-wire power cords of household goods. The tag is fabricated using a complementary metal-oxide semiconductor compatible SU-8 flexible technology which provides unique device characteristics of low-cost, reliability and pervasiveness. With a 30-turns coil design in an area of 0.5x1 cm(2), the coil tag can provide sensitivity of 18 and 21 mu V/A for detecting 50-and 60-Hz electric current in the ampere regime, respectively.Item type:Item, A Flexible Inductive Coil Tag for Household Two-Wire Current Sensing Applications(2012-06-01) ;Chen, Yung-Chang ;Yu, Sung-Chu ;Cheng, Shih-Hsien ;Cheng, Yu-Ting電子工程學系及電子研究所This paper presents a flexible inductive coil tag for sensing the electric current in the two-wire power cords of household goods. The tag is fabricated using a complementary metal-oxide semiconductor compatible SU-8 flexible technology which provides unique device characteristics of low-cost, reliability and pervasiveness. With a 30-turns coil design in an area of 0.5 x 1 cm(2), the coil tag can provide sensitivity of 18 and 21 mu V/A for detecting 50- and 60-Hz electric current in the ampere regime, respectively.Item type:Item, A Model-Based-Random-Forest Framework for Predicting V-t Mean and Variance Based on Parallel I-d Measurement(2018-10-01) ;Lin, Chien-Hsueh ;Tsai, Chih-Ying ;Lee, Kao-Chi ;Yu, Sung-ChuLiau, Wen-RongTo measure the variation of device V-t requires long test for conventional wafer acceptance test (WAT) test structures. This paper presents a framework that can efficiently and effectively obtain the mean and variance of V-t for a large number of designs under test (DUTs). The proposed framework applies the model-based random forest as its core model-fitting technique to learn a model that can predict the mean and variance of V-t based only on the combined I-d measured from parallel connected DUTs. The proposed framework can further minimize the total number of I-d measurement required for prediction models while limiting their accuracy loss. The experimental results based on the SPICE simulation of a UMC 28-nm technology demonstrate that the proposed model-fitting framework can achieve a more than 99% R -squared for predicting either V-t mean or V-t variance. Compared to conventional WAT test structures using binary search, our proposed framework can achieve a 120.3x speedup on overall test time for test structures with 800 DUTs.Item type:Item, Predicting V-t Mean and Variance from Parallel I-d Measurement with Model-Fitting Technique(2016) ;Tsai, Chih-Ying ;Lee, Kao-Chi ;Lin, Chien-Hsueh ;Yu, Sung-ChuLiau, Wen-RongTo measure the variation of device V-t requires long test for conventional WAT test structures. This paper presents a framework that can efficiently and effectively obtain the mean and variance of V-t for a large number of DUTs. The proposed framework applies the model-based random forest as its core model-fitting technique to learn a model that can predict the mean and variance of V-t based on only the combined I-d measured from parallel connected DUTs. The experimental results based on the SPICE simulation of a UMC 28nm technology demonstrate that the proposed model-fitting framework can achieve a more than 99% R-squared for predicting both of V-t mean and variance. Compared to conventional WAT test structures using binary search, our proposed framework can achieve 42.9X speedup in turn of the required iterations of I-d measurement per DUT.