Browsing by Author "Yu, Terrence"

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Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
(2013-08-01)
Trinh, Hai-Dang
;
Lin, Yueh-Chin
;
Kuo, Chien-I
;
Chang, Edward Yi
;
Hong-Quan Nguyen
The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.