Browsing by Author "Yu, Ting-Yang"

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Asymmetric Low Temperature Bonding Structure Using Ultra-thin Buffer Layer Technique for 3D Integration
(2016)
Liang, Hao-Wen
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Yu, Ting-Yang
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Chang, Yao-Jen
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Chen, Kuan-Neng
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電子工程學系及電子研究所
Wafer-level Sn/In-Cu bonding structure with Ni ultra-thin buffer layer is investigated to achieve a reduction in solder thickness, bonding temperature and duration. Furthermore, the asymmetric bonding structure is able to separate the manufacturing process of solder and electrical isolation layer. It is a promising approach for the application on hybrid bonding of three-dimensional integration.
Asymmetric Low Temperature Bonding Structure with Thin Solder Layers Using Ultra-Thin Buffer Layer
(2018-08-01)
Yu, Ting-Yang
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Liang, Hag-Wen
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Chang, Yao-Jen
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Chen, Kuan-Neng
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電子工程學系及電子研究所
Asymmetric Cu to In/Sn bonding structure with Ni ultrathin buffer layer (UBL) on Cu side is investigated in this research. The usage of Ni UBL slows down intermetallic compound (IMC) formation during bonding. Asymmetric structure can separate electrical isolation and solder process to avoid interaction, which can prevent IMC formation during polymer curing. A well-bonded asymmetric structure can be achieved with submicron solder by 150 degrees C bonding for 15 min. The structure shows the potential for low temperature hybrid bonding technology in high-density three-dimensional (3D) integration.
Asymmetry Hybrid Bonding Using Cu/Sn Bonding with Polyimide for 3D Heterogeneous Integration Applications
(2017-01-01)
Huang, Yen-Jun
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Chen, Hsiu-Chi
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Yu, Ting-Yang
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Lai, Bo-Hung
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Shih, Yu-Chiao
In this work, hybrid bonding platform is successfully developed with solder bonding and photosensitive polyimide (PI) at 250 degrees C. Since solder may be affected by the curing process of polymer owing to its low melting point; an asymmetry hybrid bonding structure is proposed to overcome this issue. Metal and polymer can be well bonded simultaneously with wide integration flexibility through various ratios of polymer to metal. The mechanical strength of bonded structure is substantially improved with the better use of polymer filling in the extra areas between metal lines. The developed hybrid bonding structure shows excellent electrical characteristics and high wafer level uniformity. Furthermore, the bonded samples also show excellent reliability to endure temperature variation and humidity erosion after temperature cycling test and un-bias highly accelerated stress test. With the advantages of dielectric photosensitivity, excellent bonding qualities, high process flexibilities, strong mechanical strength, good electrical pertbrmance and high stability, the hybrid bonding structures have the outstanding potential to be used in future 3D heterogeneous applications.
Breakthrough in Cu to Cu Pillar-Concave Bonding on Silicon Substrate with Polymer Layer for Advanced Packaging, 3D, and Heterogeneous Integration
(2017-01-01)
Yang, Yu-Tao
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Yu, Ting-Yang
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Kuo, Shu-Chiao
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Huang, Tai-Yuan
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Yang, Kai-Ming
In this paper, finite element method (FEM) simulations are carried out with pillar-concave structure using silicon substrate, silicon substrate with polyimide (PI) and with polybenzoxazole (PBO) for realization of Cu-Cu bonding at low temperature. Parameters of bonding temperature, pillar diameter, concave sidewall angle, and multilayer of concave structure are all considered in simulation. In addition, pillarconcave bonding is successfully demonstrated on silicon substrates with bonding temperatures ranging from 60 degrees C to 100 degrees C. Simulation and fabrication results of concept show potential impacts on current semiconductor packaging method with advantages such as high adhesive strength of polymer on various types of substrates, simplified manufacturing process, solder free interconnect and packaging process, Cu-Cu direct bonding at temperature lower than 100 degrees C, and high tolerance in surface roughness.
Development and Investigation of Ultra-Thin Buffer Layers Used in Symmetric Cu/Sn Bonding and Asymmetric Cu/Sn-Cu Bonding for Advanced 3D Integration Applications
(2017-01-01)
Chen, Hsiu-Chi
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Kho, Yi-Tung
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Huang, Yen-Jun
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Hsieh, Yu-Sheng
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Chang, Yao-Jen
In this work, a particular ultra-thin buffer layer (UBL) with various thickness ranging from 10 nm to 100 nm and different materials including Co, Ni, Pd and Ti is inserted between Cu/Sn to delay the interdiffusion prior to eutectic bonding. The efficacy of the buffer layer and the bonding quality are systematically conferred using microstructure imaging, material analysis, and electrical performance. In addition to symmetric Cu/Sn bonding with UBL, an asymmetric Cu/Sn-Cu bonding which is proposed to relieve the heat enhanced interdiffUsion issues thereby enhancing the reliability performance is demonstrated with the assistance of UBL technology.
High Transmittance and Broaden Bandwidth through the Morphology of Anti-Reflective Layers on THz Polarizer with Si Substrate
(2017-01-01)
Chi, Nai-Chen
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Yu, Ting-Yang
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Tsai, Hsin-Cheng
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Wang, Shiang-Yu
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Luo, Chih-Wei
To improve the transmittance of THz component and overcome the difficulties of fragile structure as well as ensuring precise alignment of existing methods, a new method involving the mature 3DIC through-silicon via (TSV) technology has been proposed to make anti-reflection layer with suitable effective refractive index based on the robustness of Si wafer. Cu wire-grid polarizers were also fabricated on wafer. The THz polarizers were completed after wafer bonding with Cu sealing ring and In/Sn guard ring. Not only the new method is easier for production with better performance, but also the silicon substrate has several advantages. The novel method has proven that THz optical component could be constructed with a nearly 100% transmittance, or widened the transmittance spectrum range from 0.5 to 2 THz when transmittances is sacrificed to 70% instead of a near 100%. Furthermore, a robust structure could also be expected with broadband transmission and excellent extinction ratio. It is properly optimized for mass production because the fabrication method could be easily done and does not required high cost.
High Transmittance Broadband THz Polarizer Using 3D-IC Technologies
(2017-01-01)
Chi, Nai-Chen
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Yu, Ting-Yang
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Tsai, Hsin-Cheng
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Wang, Shiang-Yu
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Luo, Chih-Wei
A novel method of fabricating high transmittance and broadband terahertz (THz) polarizers is introduced with several advantages. A polarizer with an approximate 100% transmittance is demonstrated with single central frequency of anti-reflection (AR) layers between 0.5 THz and 2 THz. Broadband polarizer, which has a transmission spectrum of over 70% uniformity, is fabricated by bonding two wafers with different AR layers. The bandwidth of broadband THz polarizer exceeds 1 THz. Extinction ratio of the polarizer is about 30 dB depending on the frequency and Cu wire pitch. The high transmittance and broadband THz polarizer can be achieved through deep reactive-ion etching (DRIE) and wafer bonding. This new fabricating method of THz polarizers has advantages of lower cost, no accurate alignment requirement and robust structure. Therefore, this approach can possibly benefit the mass production of THz optical components in THz applications and even more.
High Transmittance Silicon Terahertz Polarizer Using Wafer Bonding Technology
(2015-01-01)
Yu, Ting-Yang
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Tsai, Hsin-Cheng
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Wang, Shiang-Yu
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Luo, Chih-Wei
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Chen, Kuan-Neng
Due to the difficulties faced in fabricating robust Terahertz (THz) optical components with low Fresnel reflection loss, the need to increase the efficiency of THz system with reduced cost is still considered as one of the most essential tasks. In this report, a new low cost THz polarizer with robust structure is proposed and demonstrated. This new THz wire grid polarizer was based on an anti-reflection (AR) layer fabricated with low temperature metal bonding and deep reactive-ion etching (DRIE). After patterning Cu wire gratings and the corresponding In/Sn solder ring on the individual silicon wafers, the inner gratings were sealed by wafer-level Cu to In/Sn guard ring bonding, providing the protection against humidity oxidation and corrosion. With the low eutectic melting point of In/Sn solder, wafers could be bonded face to face below 150 degrees C. Two anti-reflection layers on both outward surfaces were fabricated by DRIE. With the mixing of empty holes and silicon, the effective refractive index was designed to be the square root of the silicon refractive index. The central frequency of the anti-reflection layers was designed between 0.5THz to 2THz with an approximate bandwidth of 0.5THz. The samples were measured with a commercial free-standing wire grid polarizer by a THz time domain spectroscopy (THz-TDS) from 0.2THz to 2.2THz. The power transmittance is close to 100% at central frequency. Extinction ratio of the polarizer is between 20dB to 40dB depending on the frequency. The advantages of this new polarizer include high transmittance, robust structure andlow cost with no precision optical alignment required.
Investigation of Pillar-Concave Structure for Low-Temperature Cu-Cu Direct Bonding in 3-D/2.5-D Heterogeneous Integration
(2020-08-01)
Chou, Tzu-Chieh
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Yang, Kai-Ming
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Li, Jian-Chen
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Yu, Ting-Yang
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Yang, Yu-Tao
With the advantage of high surface-roughness tolerance, the pillar-concave Cu-Cu direct bonding without chemical-mechanical planarization (CMP) is investigated in detail, including the mechanism of thermal compensation, analysis of roughness, bonding strength, and bonding reliability. With the special design of Cu bond structure, excellent bonding results can be achieved under low thermal budget (150 degrees C for 1 min, atmosphere) with even high roughness of bonding surface. In addition, the pillar-concave scheme applied to fan-out panel-level package (FOPLP) has been demonstrated, showing the high feasibility of this scheme to realize applications in heterogeneous integration.
Low-Temperature Cu-Cu Direct Bonding Using Pillar-Concave Structure in Advanced 3-D Heterogeneous Integration
(2017-09-01)
Yang, Yu-Tao
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Chou, Tzu-Chieh
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Yu, Ting-Yang
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Chang, Yu-Wei
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Huang, Tai-Yuan
Low-temperature Cu-Cu bonding utilizing pillar and concave on silicon substrate with and without polymer layer is successfully implemented at 200 degrees C under atmospheric pressure. Finite-element method (FEM) simulations on stress and deformation generated during bonding process are also presented in order to discuss their influence on bonding result of several pillar diameters and of concave sidewall angles originating from the manufacturing process. The alteration of parameters in FEM simulations would also be investigated to enhance the bonding outcome. The parameters include the diameter of pillar, the sidewall angle of concave, the shape of the concave opening, the addition of extra polymer layer under Cu concave layer, the bonding temperature, and the pitch of the pillar-concave structure. The implementation of Cu-Cu bonding using pillar-concave structure could have a prospective effect on existing packaging methods in semiconductor industry with benefits of applicability to various sorts of substrates and low bonding temperature.
Non-Planarization Cu-Cu Direct Bonding and Gang Bonding with Low Temperature and Short Duration in Ambient Atmosphere
(2019-01-01)
Chou, Tzu-Chieh
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Yang, Kai-Ming
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Li, Jian-Chen
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Yu, Ting-Yang
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Chung, Ying-Ting
Low temperature (150 degrees C) and short duration Cu-Cu direct bonding, without planarization, and gang bonding approaches are demonstrated with excellent bond strength, electrical characteristics, and reliability. The concept is based on the high stress-led inducing deformation and internal friction to achieve low temperature bonding. In addition, the bonding structure has the advantage of high roughness tolerance on surface without CMP requirement. Compared to current products using Cu-Cu direct bonding at 350-400 degrees C with long duration and vacuum requirement, the breakthrough of proposed schemes provides the feasibility for product realization in 3D integration packaging.
Robust terahertz polarizers with high transmittance at selected frequencies through Si wafer bonding technologies
(2017-12-01)
Yu, Ting-Yang
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Chi, Nai-Chen
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Tsai, Hsin-Cheng
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Wang, Shiang-Yu
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Luo, Chih-Wei
Terahertz (THz) polarizers with robust structure and high transmittance are demonstrated using 3D-integrated circuit (IC) technologies. A Cu wire-grid polarizer is sealed and well protected by Si-bonded wafers through a low-temperature eutectic bonding method. Deep reactive-ion etching is used to fabricate the anti-reflection (AR) layers on outward surfaces of bonded wafers. The extinction ratio and transmittance of polarizers are between 20 dB and 33 dB, and 13 dB and 27 dB for 10 mu m and 20 mu m pitch wire-grids, respectively, and 100% at central frequency, depending on frequency and AR layer thickness. The process of polarizer fabrication is simple from mature semiconductor manufacturing techniques that lead to high yield, low cost, and potential for THz applications. (C) 2017 Optical Society of America
Simulation Analysis of Structure Design for Low Temperature Cu-Cu Direct Bonding in Heterogeneous Integration and Advanced Packaging Systems
(2018-01-01)
Pan, Yu-Ming
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Yang, Yu-Tao
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Chou, Tzu-Chieh
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Yu, Ting-Yang
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Yang, Kai-Ming
In order to realize Cu-Cu bonding at low temperature, Cu pillar-concave structures on silicon substrate and on silicon substrate with another polymer layer, polyimide (PI), are both investigated through simulation. Height of Cu pillar, thickness of upper and lower silicon substrate, and thickness of Cu concave are simulated in this paper. The proposed structure could have great impacts on current semiconductor packaging technology, such as improvement of joint strength, enhancement of adhesive strength between various substrates, a Cu-Cu bonding process lower than 200 degrees C with simplified manufacturing process.
Study on Low Temperature Cu Bonding and Temporary Bond/De-Bond for RDL-First Fan-Out Panel Level Package
(2017-01-01)
Ko, Cheng-Ta
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Yang, Kai-Ming
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Lin, Jim-Wein
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Wang, Chih-Lun
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Chou, Tzu-Chieh
In this study, Cu-Cu bonding with pillar-concave structure on a polymer layer was investigated to realize better bonding quality at lower temperature, while a low-stress release layer for temporary bond and de-bond by laser ablation was demonstrated to handle a glass panel for re-distribution layer (RDL) process. The low temperature technology can be potentially applied for RDL-first fan-out panel level package (FOPLP).