Browsing by Author "Yu, XF"

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A high-density MIM capacitor (13 fF/mu m(2)) using ALD HfO2 dielectrics
(2003-02-01)
Yu, XF
;
Zhu, CX
;
Hu, H
;
Chin, A
;
Li, MF
Metal-insulator-metal (MIM) capacitors with a different thickness of HfO2 have been investigated. The results show that both the capacitance density and voltage coefficients of capacitance (VCCs) increase with decreasing the HfO2 thickness. In addition, it is also found that the VCCs decrease logarithmically with increasing the thickness Of HfO2. Furthermore, the MIM capacitor with 10-nm HfO2 shows a record high capacitance density of 13 fF/mum(2) and a VCC of 607 ppm/V, which can meet the requirement of the International Technology Roadmap for Semiconductors. It can also provide a low leakage current of 5.95 x 10-(8)A/cm(2) at room temperature at I V, low tangent values below 0.05, and a small frequency dependence as well. All these indicate that it is very suitable for use in silicon integrated circuit applications.
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
(2004-10-04)
Yu, XF
;
Zhu, CX
;
Li, MF
;
Chin, A
;
Du, AY
The thermal stability and electrical characteristics of HfTaO gate dielectric with polycrystalline-silicon gate have been investigated. The incorporation of Ta into HfO2 enhances the crystallization temperature of film dramatically. Transmission electron microscopy micrographs confirm that HfTaO with 43% Ta film remains amorphous even after activation annealing at 950 degreesC for 30 s, and the formation of low-kappa interfacial layer is observably reduced. The capacitance-voltage curve of metal-oxide-semiconductor capacitor using HfTaO gate dielectric fits well with simulated curve, indicating good interface property between HfTaO and substrate. In addition, the boron penetration behaviors of HfTaO films are sufficiently suppressed as manifested by the narrow flat-band voltage shift. The negligible flat-band voltage shift in HfTaO with 43% Ta film is observed and attributed to its amorphous structure after device fabrication. (C) 2004 American Institute of Physics.
High-performance MIM capacitor using ALD high-k HfO2-Al2O3 laminate dielectrics
(2003-12-01)
Ding, SJ
;
Hu, H
;
Lim, HF
;
Kim, SJ
;
Yu, XF
For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO2-Al2O3 laminate dielectric' using atomic im layer deposition (ALD) technique. Our data indicates that the laminate NUM capacitor can provide high capacitance density of 12.8 fF/ mum(2) from 10 kHz up to 20 GHz, very low leakage current of 3.2 x 10(-8) A/cm(2) at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic. one of 1830 PPM/V-2, temperature coefficient of capacitance of 182 ppm/degreesC, and high breakdown field of similar to6 MV/cm as well as promising reliability. As a result, the HfO2-Al2O3 laminate is a very promising candidate for next generation MINI capacitor for radio frequency and mixed signal integrated circuit applications.
PVD HfO2 for high-precision MIM capacitor applications
(2003-06-01)
Kim, SJ
;
Cho, BJ
;
Li, MF
;
Yu, XF
;
Zhu, CX
Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO2 with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF/mum(2) have been achieved while maintaining the leakage current densities around 1 x 10(-8) A/cm(2) within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.
RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applications
(2004-06-01)
Ding, SJ
;
Hu, H
;
Zhu, CX
;
Kim, SJ
;
Yu, XF
High-performance metal-insulator-metal capacitors using atomic layer-deposited HfO2-Al2O3 laminate are fabricated and characterized for RF and mixed-signal applications. The laminate capacitor can offer high capacitance density (12.8 fF/mum(2)) up to 20 GHz, low leakage current of 4.9 x 10(-8) A/cm(2) at 2 V and 125 degreesC, and small linear voltage coefficient of capacitance of 211 ppm/V at 1 MHz, which can easily satisfy RF capacitor requirements for year 2007 according to the International Technology Roadmap for Semiconductors. In addition, effects of constant voltage stress and temperature on leakage current and voltage linearity are comprehensively investigated, and dependences of quadratic voltage coefficient of capacitance (alpha) on frequency and thickness are also demonstrated. Meanwhile, the underlying mechanisms are also discussed.