Browsing by Author "Yu Tzu-Yi"

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Method for treating the dislocation in a GaN-containing semiconductor layer
(2013-04-16)
Lee Wei-I
;
Yeh Yen-Hsien
;
Wu Yin-Hao
;
Yu Tzu-Yi
A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.
METHOD FOR TREATING THE DISLOCATION IN A GAN-CONTAINING SEMICONDUCTOR LAYER
(2013-04-25)
Lee Wei-I
;
Yeh Yen-Hsien
;
Wu Yin-Hao
;
Yu Tzu-Yi
A method for treating the threading dislocation within a GaN-containing semiconductor layer is provided. The method includes a substrate is provided. A GaN-containing semiconductor layer with the threading dislocation is formed on the substrate. An etching process with an etching gas is performed to remove the threading dislocation in the GaN-containing semiconductor layer so as to increase the efficiency for the light emitting device.