Browsing by Author "Yuan, Fang-Yuan"

Now showing 1 - 1 of 1

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment
(2017-10-26)
Yuan, Fang-Yuan
;
Deng, Ning
;
Shih, Chih-Cheng
;
Tseng, Yi-Ting
;
Chang, Ting-Chang
A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 10(9) cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (V-o(+)) which limit electron movement through the switching layer.