Browsing by Author "Yuan, Shuo-Huang"

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AlGaN/GaN MOS-HEMTs with Corona-Discharge Plasma Treatment
(2017-05-01)
Yuan, Shuo-Huang
;
Chang, Feng-Yeh
;
Wuu, Dong-Sing
;
Horng, Ray-Hua
;
電子工程學系及電子研究所
The effects of a corona-discharge plasma treatment on the performance of an AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor fabricated onto Si substrates were studied. The threshold voltage shifted from -8.15 to -4.21 V when the device was treated with an Al2O3 layer. The leakage current was reduced from 2.9 x 10(-5) to 4.2 x 10(-7) mA/mm, and the I-ON/I-OFF ratio increased from 8.3 x 10(6) to 7.3 x 10(8) using the corona-discharge plasma treatment, which exhibited an increase of about two orders of magnitude. The device exhibited excellent performance with a subthreshold swing of 78 mV/dec and a peak gain of 47.92 mS/mm at V-GS = 10 V.
Au Nanoparticle Light Scattering Enhanced Responsivity in Pentacene Phototransistor for Deep-UV Light Detection
(2015-11-01)
Yuan, Shuo-Huang
;
Pei, Zingway
;
Lai, Hsin-Cheng
;
Chen, Chien-Hsun
;
Li, Pei-Wen
In this letter, a pentacene thin-film phototransistor (PTFP) with gold nanoparticles (Au-NPs) decoration in bottom-gate structure was demonstrated. With the Au-NPs, this device is capable of scattering the free-space ultra-violet (UV) irradiation into the pentacene film. Therefore, the PTFP with Au-NPs exhibit 4.5-A/W responsivity with V-GS = 0 V at the wavelength of 240 nm. Meanwhile, an ultimate 32.4-A/W responsivity can be achieved with V-GS = -10 V at the wavelength of 240 nm. Such an excellent spectral response suggests PTFP is capable for used in daily and disposable UV status assessment.
Process Integration and Interconnection Design of Passive-Matrix LED Micro-Displays With 256 Pixel-Per-Inch Resolution
(2020-01-01)
Yuan, Shuo-Huang
;
Yan, Shih-Siang
;
Yao, Yu-Shiuan
;
Wu, Chung-Cheng
;
Horng, Ray-Hua
A 0.28-inch InGaN-based blue micro-LED display with 256 pixel-per-inch resolution and a pitch of $100 mu m was successfully fabricated in this study. A thick Ti/Al/Ti/Au interconnection metal was deposited on the n-type gallium nitride (n-GaN) region to reduce the interconnection resistance. The micro-LED array with interconnection metal exhibits better electrical property consistency as compared with that of the traditional one. The output power, forward voltage, and external quantum efficiency of micro-LED, which measured under 1-mA current injection with the full lighting mode, are 0.8 mW, 3.0 V, and 10%, respectively. This technique has the potential to integrate InGaN-based LEDs with quantum dots for full-color applications.